IPD042P03L3 G TM OptiMOS P3 Power-Transistor Product Summary Features V -30 V DS single P-Channel (Logic Level) V = 10V R 4.2 mW DS(on),max GS Enhancement mode V = 4.5V 6.8 GS 1) Qualified according JEDEC for target applications I -70 A D 175 C operating temperature Pb-free RoHS compliant applications: load switch, HS-switch PG-TO252-3 D Halogen-free according to IEC61249-2-21 G S Type Package Marking Lead free Packing IPD042P03L3 G PG-TO252-3 042P03L Yes non dry Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C -70 Continuous drain current A D C T =100C -70 C 2) Pulsed drain current I -280 T =25C D,pulse C E Avalanche energy, single pulse I =-70A, R =25W 269 mJ AS D GS V 20 Gate source voltage V GS Power dissipation P T =25C 150 W tot C Operating and storage temperature T , T -55 ... 175 C j stg class 2 ( 2 kV - < 4 kV) ESD class JESD22-A114 HBM 260 Soldering temperature C IEC climatic category DIN IEC 68-1 55/175/56 1) J-STD20 and JESD22 Rev. 2.2 page 1 2014-05-16IPD042P03L3 G Values Parameter Symbol Conditions Unit min. typ. max. Thermal characteristics Thermal resistance, R - - 1.0 K/W thJC junction - case Thermal resistance, 2 2) R - - 50 thJA 6 cm cooling area junction - ambient Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I =-250mA -30 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =-270A -2.0 -1.5 -1.0 GS(th) DS GS D V =-30V, V =0V, DS GS Zero gate voltage drain current I - - -1 A DSS T =25C j V =-30V, V =0V, DS GS - - -300 T =175C j I V =-20V, V =0V Gate-source leakage current - -10 -100 nA GSS GS DS Drain-source on-state resistance R V =-4.5V, I =-70A - 4.6 6.8 mW DS(on) GS D V =-10V, I =-70A - 3.5 4.2 GS D Gate resistance R - 2.4 - W G V >2 I R , DS D DS(on)max g Transconductance 65 130 - S fs I =-70A D 2) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2014-05-16