IPD30N10S3L-34 OptiMOS -T Power-Transistor Product Summary V 100 V DS R 31 mW DS(on),max I 30 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD30N10S3L-34 PG-TO252-3-11 3N10L34 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C, V =10V Continuous drain current 30 A D C GS 1) 20 T =100C, V =10V C GS 1) I T =25C 120 Pulsed drain current D,pulse C 1) E I =15A 138 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse 30 A AS 2) V 20 V Gate source voltage GS Power dissipation P T =25C 57 W tot C T , T Operating and storage temperature -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 55/175/56 Rev. 1.1 page 1 2011-10-06IPD30N10S3L-34 Parameter Symbol Conditions Values Unit min. typ. max. 1) Thermal characteristics Thermal resistance, junction - case R - - 2.6 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0V, I = 1mA Drain-source breakdown voltage 100 - - V (BR)DSS GS D V V =V , I =29A Gate threshold voltage 1.2 1.7 2.4 GS(th) DS GS D V =80V, V =0V, DS GS I Zero gate voltage drain current - 0.01 0.1 A DSS T =25C j V =80V, V =0V, DS GS - 1 10 1) T =125C j I V =16V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =4.5V, I =30A Drain-source on-state resistance - 32.2 41.8 mW DS(on) GS D V =10 V, I =30 A - 25.8 31.0 GS D Rev. 1.1 page 2 2011-10-06