IPD50N10S3L-16 OptiMOS -T Power-Transistor Product Summary V 100 V DS R 15 mW DS(on),max I 50 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD50N10S3L-16 PG-TO252-3-11 QN10L16 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit I T =25C, V =10V Continuous drain current 50 A D C GS 1) 38 T =100C, V =10V C GS 1) I T =25C 200 Pulsed drain current D,pulse C 1) E I =25A 330 mJ Avalanche energy, single pulse AS D I Avalanche current, single pulse - 50 A AS 2) V - 20 V Gate source voltage GS Power dissipation P T =25C 100 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg Rev. 1.3 page 1 2015-10-07IPD50N10S3L-16 Values Parameter Symbol Conditions Unit min. typ. max. 1) Thermal characteristics Thermal resistance, junction - case R - - - 1.5 K/W thJC SMD version, device on PCB R minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = 1mA 100 - - V (BR)DSS GS D V V =V , I =60A Gate threshold voltage 1.2 1.7 2.4 GS(th) DS GS D V =80V, V =0V, DS GS I Zero gate voltage drain current - 0.01 0.1 A DSS T =25C j V =80V, V =0V, DS GS - 0.1 10 1) T =125C j I V =16V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =4.5V, I =50A Drain-source on-state resistance - 15.3 19.9 mW DS(on) GS D V =10V, I =50A - 12.5 15.0 GS D Rev. 1.3 page 2 2015-10-07