IPD90N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 3.3 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N03S4L-03 PG-TO252-3-11 4N03L03 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit 1) I T =25 C, V =10 V 90 A Continuous drain current D C GS T =100 C, C 90 2) V =10 V GS 2) I T =25 C 360 Pulsed drain current D,pulse C Avalanche energy, single pulse E I =90 A 85 mJ AS D I T =25 C Avalanche current, single pulse 90 A AS C V Gate source voltage - 16 V GS Power dissipation P T =25 C 94 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg IEC climatic category DIN IEC 68-1 - - 55/175/56 Rev. 2.1 page 1 2010-03-08IPD90N03S4L-03 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics Thermal resistance, junction - case R - - 1.6 K/W thJC R SMD version, device on PCB minimal footprint - - 62 thJA 2 3) -- 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics V V =0 V, I = 1 mA Drain-source breakdown voltage 30 - - V (BR)DSS GS D V V =V , I =45 A Gate threshold voltage 1.0 1.6 2.2 GS(th) DS GS D V =30 V, V =0 V, DS GS I Zero gate voltage drain current - 0.01 1 A DSS T =25 C j V =30 V, V =0 V, DS GS - 10 1000 2) T =125 C j V =18 V, V =0 V, DS GS -5 60 2) T =85 C j I V =16 V, V =0 V Gate-source leakage current - 1 100 nA GSS GS DS Drain-source on-state resistance R V =4.5 V, I =45 A - 3.4 4.4 m DS(on) GS D V =10 V, I =90 A - 2.5 3.3 GS D Rev. 2.1 page 2 2010-03-08