IPD90N10S4-06 TM OptiMOS -T2 Power-Transistor Product Summary V 100 V DS R 6.7 mW DS(on),max I 90 A D Features N-channel - Normal Level - Enhancement mode PG-TO252-3-313 AEC qualified TAB MSL1 up to 260C peak reflow 175C operating temperature 1 3 Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N10S4-06 PG-TO252-3-313 4N1006 Maximum ratings, at T =25 C, unless otherwise specified j Parameter Symbol Conditions Value Unit 1) I T =25C, V =10V 90 A Continuous drain current D C GS 1) T =100C, V =10V 72 C GS 2) I T =25C 360 Pulsed drain current D,pulse C 2) E I =45A 250 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 70 A AS V Gate source voltage - 20 V GS P T =25C Power dissipation 136 W tot C T , T Operating and storage temperature - -55 ... +175 C j stg Rev. 1.0 page 1 2014-06-30IPD90N10S4-06 Parameter Symbol Conditions Values Unit min. typ. max. 2) Thermal characteristics R Thermal resistance, junction - case - - - 1.1 K/W thJC Thermal resistance, junction - R - - - 62 thJA ambient, leaded SMD version, device on PCB R minimal footprint - - 62 thJA 2 3) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = 1mA 100 - - V (BR)DSS GS D Gate threshold voltage V V =V , I =90A 2.0 2.7 3.5 GS(th) DS GS D I V =100V, V =0V Zero gate voltage drain current - 0.01 1 A DSS DS GS V =100V, V =0V, DS GS - 1 100 2) T =125C j Gate-source leakage current I V =20V, V =0V - - 100 nA GSS GS DS R V =10V, I =90A Drain-source on-state resistance - 5.9 6.7 mW DS(on) GS D Rev. 1.0 page 2 2014-06-30