The IPS70R600P7SAKMA1 is an efficient, low on-state resistance (RDS(on)) N-channel MOSFET manufactured by Infineon Technologies. It is designed for high speed switching applications in LLC and ½ Bridge converters, making it suitable for Automotive, Computer, Consumer, Industrial, and other high-speed, high-reliability applications. This device has a power rating of 600V and a maximum RDS(on) of 70m ohms @ 10V. Additionally, it features a wide gate-source voltage range of 12V to 20V and is operated at a maximum junction temperature of 150°C.