PD - 95489D IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D V = 75V 175C Operating Temperature DSS Fast Switching Repetitive Avalanche Allowed up to Tjmax R = 4.5m DS(on) G Lead-Free I = 160A S Description D This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of 2 TO-220AB D Pak TO-262 applications. IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 170 D C GS I T = 100C Continuous Drain Current, V 10V (See Fig. 9) 120 C D GS A I T = 25C 160 * C Continuous Drain Current, V 10V (Wirebond Limited) D GS I 680 DM Pulsed Drain Current P T = 25C 300 W D C Maximum Power Dissipation Linear Derating Factor 2.0 W/C V 20 V GS Gate-to-Source Voltage E AS 270 mJ Single Pulse Avalanche Energy (Thermally Limited) E (tested) 690 AS Single Pulse Avalanche Energy Tested Value I AR See Fig.12a,12b,15,16 A Avalanche Current E mJ AR Repetitive Avalanche Energy T Operating Junction and -55 to + 175 J T C STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case 0.50 R 0.50 CS Case-to-Sink, Flat, Greased Surface C/W R JA Junction-to-Ambient 62 R JA 40 Junction-to-Ambient (PCB Mount, steady state) HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage75 V V = 0V, I = 250A GS D V / T Breakdown Voltage Temp. Coefficient 0.069 V/C Reference to 25C, I = 1mA DSS J D R DS(on) Static Drain-to-Source On-Resistance 3.5 4.5 V = 10V, I = 75A m GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D gfs Forward Transconductance 180 S V = 25V, I = 75A DS D I DSS Drain-to-Source Leakage Current 20 A V = 75V, V = 0V DS GS 250 V = 75V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 180270 I = 75A g D Q gs Gate-to-Source Charge 46 nC V = 60V DS Q gd Gate-to-Drain Mille) Charge 65 V = 10V GS t Turn-On Delay Time 19 ns V = 38V d(on) DD t r Rise Time 140 I = 75A D t d(off) Turn-Off Delay Time 97 R = 2.5 G t Fall Time 100 V = 10V f GS L Internal Drain Inductance 5.0 nH Between lead, D D 6mm (0.25in.) G L Internal Source Inductance 13 from package S S and center of die contact C iss Input Capacitance 7500 pF V = 0V GS C Output Capacitance 970 V = 25V oss DS C rss Reverse Transfer Capacitance 510 = 1.0MHz, See Fig. 5 C oss Output Capacitance 3640 V = 0V, V = 1.0V, = 1.0MHz GS DS C Output Capacitance 650 V = 0V, V = 60V, = 1.0MHz oss GS DS C eff. oss Effective Output Capacitance 1020 V = 0V, V = 0V to 60V GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current MOSFET symbol S 160* (Body Diode) A showing the I G SM Pulsed Source Current integral reverse 680 S (Body Diode) p-n junction diode. V Diode Forward Voltage T = 25C, I = 75A, V = 0V SD 1.3 V J S GS t T = 25C, I = 75A, V = 38V Reverse Recovery Time 41 61 ns rr J F DD Q di/dt = 100A/s Reverse Recovery Charge 59 89 nC rr t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating pulse width limited by This value determined from sample failure population. max. junction temperature. (See fig. 11). 100% tested to this value in production. Limited by T , starting T = 25C, L=0.095mH, Jmax J 2 This is applied to D Pak, when mounted on 1 square PCB R = 25 , I = 75A, V =10V. G AS GS ( FR-4 or G-10 Material ). For recommended footprint and Part not recommended for use above this value. soldering techniques refer to application note AN-994. I 75A, di/dt 340A/s, V V , SD DD (BR)DSS R is measured at T of approximately 90C. J T 175C. J TO-220 device will have an Rth of 0.45C/W. Pulse width 1.0ms duty cycle 2%. Calculated continuous current based on maximum C eff. is a fixed capacitance that gives the same oss allowable junction temperature. Bond wire current limit is charging time as C while V is rising from oss DS 160A.Note that current limitations arising from heating of 0 to 80% V . DSS the device leads may occur with some lead mounting Limited by T , see Fig.12a, 12b, 15, 16 for typical Jmax arrangements. (Refer to AN-1140