StrongIRFET IRF40B207 HEXFET Power MOSFET Application Brushed Motor drive applications D V 40V BLDC Motor drive applications DSS Battery powered circuits R typ. 3.6m DS(on) Half-bridge and full-bridge topologies G Synchronous rectifier applications max 4.5m Resonant mode power supplies S OR-ing and redundant power switches I 95A D DC/DC and AC/DC converters DC/AC Inverters Benefits S D Improved Gate, Avalanche and Dynamic dV/dt Ruggedness G Fully Characterized Capacitance and Avalanche SOA TO-220AB Enhanced body diode dV/dt and dI/dt Capability IRF40B207 Lead-Free* RoHS Compliant, Halogen-Free G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRF40B207 TO-220 Tube 50 IRF40B207 15 100 I = 57A D 12 80 9 60 T = 125C J 6 40 3 20 T = 25C J 0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback April 1, 2015 R , Drain-to -Source On Resistance (m) DS(on) I , Drain Current (A) D IRF40B207 Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, VGS 10V (Silicon Limited) 95 D C I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 67 A D C GS I Pulsed Drain Current 380 DM P T = 25C Maximum Power Dissipation 83 W D C Linear Derating Factor 0.56 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and -55 to + 175 J C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics E Single Pulse Avalanche Energy 85 AS (Thermally limited) mJ E 167 AS (Thermally limited) Single Pulse Avalanche Energy I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.8 JC Case-to-Sink, Flat Greased Surface R 0.50 C/W CS Junction-to-Ambient R 62 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.039 V/C Reference to 25C, I = 1mA V /T (BR)DSS J D 3.6 4.5 V = 10V, I = 57A GS D R Static Drain-to-Source On-Resistance m DS(on) 5.4 V = 6.0V, I = 29A GS D V Gate Threshold Voltage 2.2 3.0 3.9 V V = V , I = 50A GS(th) DS GS D 1.0 V =40 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V =40V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.0 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.052mH, R = 50, I = 57A, V =10V. Jmax J G AS GS I 57A, di/dt 860A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while VDS is rising from 0 to 80% V . oss oss DSS R is measured at T approximately 90C. J Limited by T , starting T = 25C, L = 1mH, R = 50 , I = 18A, V =10V. Jmax J G AS GS 2 www.irf.com 2015 International Rectifier Submit Datasheet Feedback April 1, 2015