PD - 95202 IRF7402PbF HEXFET Power MOSFET Generation V Technology A Ultra Low On-Resistance A 1 8 S D N-Channel MOSFET V = 20V DSS 2 7 S D Very Small SOIC Package Low Profile (<1.1mm) 3 6 S D Available in Tape & Reel 4 5 G D R = 0.035 DS(on) Fast Switching Lead-Free Top View Description Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characterstics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared or wave soldering techniques. Power dissipation of greater than 0.8 W is possible in a typical PCB mount application. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 4.5V 6.8 D A GS I T = 70C Continuous Drain Current, V 4.5V 5.4 A D A GS I Pulsed Drain Current 54 DM P T = 25C Power Dissipation 2.5 W D A P T = 70C Power Dissipation 1.6 D A Linear Derating Factor 0.02 W/C V Gate-to-Source Voltage 12 V GS dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 50 C/W JA www.irf.com 1 9/30/04IRF7402PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.024 V/C Reference to 25C, I = 1mA (BR)DSS J D 0.035 V = 4.5V, I = 4.1A GS D R Static Drain-to-Source On-Resistance DS(on) 0.050 V = 2.7V, I = 3.5A GS D V Gate Threshold Voltage 0.70 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 6.1 S V = 10V, I = 1.9A fs DS D 1.0 V = 16V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 25 V = 16V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage 100 V = 12V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -12V GS Q Total Gate Charge 14 22 I = 3.8A g D Q Gate-to-Source Charge 2.0 3.0 nC V = 16V gs DS Q Gate-to-Drain Mille) Charge 6.3 9.5 V = 4.5V, See Fig. 6 and 12 gd GS t Turn-On Delay Time 5.1 V = 10V d(on) DD t Rise Time 47 I = 3.8A r D ns t Turn-Off Delay Time 24 R = 6.2 d(off) G t Fall Time 32 R = 2.6 f D C Input Capacitance 650 V = 0V iss GS C Output Capacitance 300 pF V = 15V oss DS C Reverse Transfer Capacitance 150 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.5 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 54 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.2 V T = 25C, I = 3.8A, V = 0V SD J S GS t Reverse Recovery Time 51 77 ns T = 25C, I = 3.8A rr J F Q Reverse Recovery Charge 69 100 nC di/dt = 100A/s rr Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2%. max. junction temperature. (See fig. 11) When mounted on 1 inch square copper board, t<10 sec I 3.8A, di/dt 96A/s, V V , SD DD (BR)DSS T 150C J This data sheet has curves & data from IRF7601 2 www.irf.com