Generation V Technology A 1 8 Ultra Low On-Resistance S D P-Channel MOSFET V = -30V 2 7 DSS D S Very Small SOIC Package 3 6 S D Low Profile (<1.1mm) 4 Available in Tape & Reel 5 G D R = 0.09 DS(on) Fast Switching Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area Micro8 of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Absolute Maximum Ratings Parameter Max. Units V Drain-Source Voltage -30 V DS I T = 25C Continuous Drain Current, V -10V -3.6 D A GS I T = 70C Continuous Drain Current, V -10V -2.9 A D A GS I Pulsed Drain Current -29 DM P T = 25C Maximum Power Dissipation 1.8 W D A P T = 70C Maximum Power Dissipation 1.1 W D A Linear Derating Factor 14 mW/C V Gate-to-Source Voltage 20 V GS V Gate-to-Source Voltage Single Pulse tp<10S 30 V GSM dv/dt Peak Diode Recovery dv/dt -5.0 V/ns T , T Junction and Storage Temperature Range -55 to + 150 C J STG Soldering Temperature, for 10 seconds 240 (1.6mm from case) Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 70 C/W JA All Micro8 Data Sheets reflect improved Thermal Resistance, Power and Current -Handling Ratings- effective only for product marked with Date Code 505 or later . www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -30 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient -0.024 V/C Reference to 25C, I = -1mA (BR)DSS J D 0.075 0.09 V = - 10V, I = -2.4A GS D R Static Drain-to-Source On-Resistance DS(on) 0.15 V = -4.5V, I = -1.2A GS D V Gate Threshold Voltage -1.0 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 2.3 S V = -10V, I = -1.2A fs DS D -1.0 V = -24V, V = 0V DS GS -25 V = -24V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage -100 V = -20V GS Gate-to-Source Reverse Leakage 100 V = 20V GS Q Total Gate Charge 20 30 I = -2.4A g D Q Gate-to-Source Charge 2.1 3.1 nC V = -24V gs DS Q Gate-to-Drain Mille) Charge 7.6 11 V = -10V, See Fig. 9 gd GS t Turn-On Delay Time 13 V = -10V d(on) DD t Rise Time 20 I = -2.4A r D t Turn-Off Delay Time 43 R = 6.0 d(off) G t Fall Time 39 R = 4.0 f D C Input Capacitance 520 V = 0V iss GS C Output Capacitance 300 pF V = -25V oss DS C Reverse Transfer Capacitance 140 = 1.0MHz, See Fig. 8 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S (Body Diode) showing the G I Pulsed Source Current integral reverse SM -29 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -2.4A, V = 0V SD J S GS t Reverse Recovery Time 43 64 ns T = 25C, I = -2.4A rr J F Q Reverse Recovery Charge 50 76 nC di/dt = -100A/s rr Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2%. max. junction temperature. ( See fig. 10 ) I -2.4A, di/dt -130A/s, V V , Surface mounted on FR-4 board, t SD DD (BR)DSS T 150C 10sec. J 2 www.irf.com