DirectFET Power MOSFET RoHS Compliant, Halogen Free Lead-Free (Qualified up to 260C Reflow) Ideal for High Performance Isolated Converter V V R DSS GS DS(on) Primary Switch Socket 150V min 20V max 9.0m 10V Optimized for Synchronous Rectification Q Q V g tot gd gs(th) Low Conduction Losses 97nC 33nC 4.0V High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible S S S S Compatible with existing Surface Mount Techniques G D D S S Industrial Qualified S S DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline SB SC M2 M4 L4 L6 L8 Description TM The IRF7779L2TR/TR1PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to 2 achieve the lowest on-state resistance in a package that has a footprint smaller than a D PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7779L2TR/TR1PbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. Standard Pack Orderable part number Package Type Note Form Quantity IRF7779L2TRPbF DirectFET2 Large Can Tape and Reel 4000T suffix IRF7779L2TR1PbF DirectFET2 Large Can Tape and Reel 1000TR1 suffix EOL notice 264 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 150 V DS Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 67 D C GS 47 A I T = 100C Continuous Drain Current, V 10V (Silicon Limited) D C GS 11 I T = 25C Continuous Drain Current, V 10V (Silicon Limited) D A GS 375 I T = 25C Continuous Drain Current, V 10V (Package Limited) D C GS Pulsed Drain Current 270 I DM E Single Pulse Avalanche Energy 270 mJ AS Avalanche Current 40 A I AR 20.00 50.00 T = 25C I = 40A C D 40.00 V = 7.0V 16.00 GS 30.00 V = 8.0V GS V = 10V GS T = 125C 20.00 J V = 15V GS 12.00 10.00 T = 25C J 0.00 8.00 4.0 6.0 8.0 10.0 12.0 14.0 16.0 50 70 90 110 V , Gate-to-Source Voltage (V) GS I , Drain Current (A) D Fig 1. Typical On-Resistance vs. Gate Voltage Fig 2. Typical On-Resistance vs. Drain Current Click on this section to link to the appropriate technical paper. T measured with thermocouple mounted to top (Drain) of part. C Click on this section to link to the DirectFET Website. Repetitive rating pulse width limited by max. junction temperature. Surface mounted on 1 in. square Cu board, steady state. Starting T = 25C, L = 0.33mH, R = 25, I = 40A. J G AS T ypical R (on), (m) DS Typica ( l R m) DS(o n) Static T = 25C (unless otherwise specified) J Conditions Parameter Min. Typ. Max. Units V = 0V, I = 250 A BV Drain-to-Source Breakdown Voltage 150 V GS D DSS Reference to 25C, I = 2mA V /T Breakdown Voltage Temp. Coefficient 0.13 V/C D DSS J R Static Drain-to-Source On-Resistance 9.0 11 V = 10V, I = 40A m GS D DS(on) V = V , I = 250 A V Gate Threshold Voltage 3.0 4.0 5.0 V DS GS D GS(th) V / T Gate Threshold Voltage Coefficient -15 mV/C GS(th) J I V = 150V, V = 0V Drain-to-Source Leakage Current 20 A DS GS DSS V = 120V, V = 0V, T = 125C 250 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS V = 50V, I = 40A gfs Forward Transconductance 83 S DS D Q Total Gate Charge 97 150 g Q V = 75V Pre-Vth Gate-to-Source Charge 27 gs1 DS Q V = 10V Post-Vth Gate-to-Source Charge 6.9 nC gs2 GS Q I = 40A Gate-to-Drain Charge 33 50 gd D Q Gate Charge Overdrive 30 See Fig. 9 godr Q Switch Charge (Q + Q ) 40 sw gs2 gd V = 16V, V = 0V Q Output Charge 39 nC oss DS GS R Gate Resistance 1.5 G V = 75V, V = 10V t Turn-On Delay Time 16 d(on) DD GS I = 40A t Rise Time 19 r D t R =1.8 Turn-Off Delay Time 36 ns d(off) G t Fall Time 12 f V = 0V C Input Capacitance 6660 iss GS V = 25V C Output Capacitance 840 pF DS oss C Reverse Transfer Capacitance 180 = 1.0MHz rss V = 0V, V = 1.0V, f=1.0MHz C Output Capacitance 5620 GS DS oss V = 0V, V = 120V, f=1.0MHz C Output Capacitance 400 GS DS oss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I MOSFET symbol Continuous Source Current 67 S showing the (Body Diode) A I integral reverse Pulsed Source Current 270 SM (Body Diode) p-n junction diode. V T = 25C, I = 40A, V = 0V Diode Forward Voltage 1.3 V SD J S GS t T = 25C, I = 40A, V = 75V Reverse Recovery Time 110 170 ns rr J F DD Q Reverse Recovery Charge 510 770 nC di/dt = 100A/ s rr Repetitive rating pulse width limited by max. junction temperature. Pulse width 400s duty cycle 2%.