IRF9362PbF HEXFET Power MOSFET V -30 V DS R DS(on) max 21.0 m ( V = -10V) GS R DS(on) max 32.0 m ( V = -4.5V) GS Q 13 nC g (typical) Top View SO-8 I D -8.0 A ( T = 25C) A Applications Features and Benefits Features Resulting Benefits Industry-Standard SO-8 Package results in Multi-Vendor Compatibility RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier Orderable part number Package Type Standard Pack Note Form Quantity IRF9362PbF SO8 Tube/Bulk 95 IRF9362TRPbF SO8 Tape and Reel 4000 Absolute Maximum Ratings Max. Parameter Units V -30 Drain-to-Source Voltage DS V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V -10V -8.0 GS D A Continuous Drain Current, V -10V -6.4 A I T = 70C A GS D -64 I Pulsed Drain Current DM 2.0 P T = 25C Power Dissipation A D W Power Dissipation 1.3 P T = 70C D A Linear Derating Factor 0.016 W/C Operating Junction and -55 to + 150 T J C T Storage Temperature Range STG Notes through are on page 2 www.irf.com 1 11/18/10 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = -250A Drain-to-Source Breakdown Voltage -30 V GS D DSS Reference to 25C, I = -1mA V / T Breakdown Voltage Temp. Coefficient 0.021 V/C D DSS J R V = -10V, I = -8.0A 17.0 21.0 GS D DS(on) Static Drain-to-Source On-Resistance m V = -4.5V, I = -6.4A 25.7 32.0 GS D V Gate Threshold Voltage -1.3 -1.8 -2.4 V V = V , I = -25A GS(th) DS GS D V Gate Threshold Voltage Coefficient -5.8 mV/C GS(th) I V = -24V, V = 0V Drain-to-Source Leakage Current -1.0 DS GS DSS A V = -24V, V = 0V, T = 125C -150 DS GS J I V = -20V Gate-to-Source Forward Leakage -100 GS GSS nA V = 20V Gate-to-Source Reverse Leakage 100 GS V = -10V, I = -6.4A gfs Forward Transconductance 12 S DS D Q V = -15V, V = -4.5V, I = - 6.4A Total Gate Charge 13 nC g DS GS D Q V = -10V Total Gate Charge 26 39 GS g Q nC V = -15V Gate-to-Source Charge 3.8 DS gs Q Gate-to-Drain Charge 6.3 I = -6.4A D gd R Gate Resistance 17 G = -30V, V = -10V t Turn-On Delay Time 5.2 V DD GS d(on) I = -1.0A t Rise Time 5.9 D r ns t Turn-Off Delay Time 115 R = 6.0 d(off) G t Fall Time 53 See Figs. 19a & 19b f V = 0V C Input Capacitance 1300 iss GS = -25V C Output Capacitance 250 pF V oss DS C Reverse Transfer Capacitance 170 = 1.0kHz rss Avalanche Characteristics Typ. Max. Parameter Units E Single Pulse Avalanche Energy 94 mJ AS I -6.4 Avalanche Current A AR Diode Characteristics Conditions Parameter Min. Typ. Max. Units I MOSFET symbol Continuous Source Current D S -2.0 showing the (Body Diode) A G I integral reverse Pulsed Source Current SM -64 S p-n junction diode. (Body Diode) V Diode Forward Voltage -1.2 V T = 25C, I = -2.0A, V = 0V SD J S GS t Reverse Recovery Time 32 48 ns T = 25C, I = -2.0A, V = -24V rr DD J F Q Reverse Recovery Charge 20 30 nC di/dt = 100/s rr Thermal Resistance Typ. Max. Parameter Units R Junction-to-Drain Lead 20 JL C/W R Junction-to-Ambient 62.5 JA Repetitive rating pulse width limited by max. junction temperature. Starting T = 25C, L = 4.6mH, R = 25 , I = -6.4A. J G AS Pulse width 400s duty cycle 2%. When mounted on 1 inch square copper board. R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com