IRFB4228PbF Features Key Parameters Advanced Process Technology V min 150 V DS Key Parameters Optimized for PDP Sustain, V typ. 180 V DS (Avalanche) Energy Recovery and Pass Switch Applications R typ. 10V m Low E Rating to Reduce Power 12 DS(ON) PULSE Dissipation in PDP Sustain, Energy Recovery I max T = 100C 170 A RP C and Pass Switch Applications T max 175 C J Low Q for Fast Response G High Repetitive Peak Current Capability for D Reliable Operation D Short Fall & Rise Times for Fast Switching 175C Operating Junction Temperature for Improved Ruggedness G S Repetitive Avalanche Capability for Robustness D G and Reliability S TO-220AB GD S Gate Drain Source Description HEXFET Power MOSFET MOSFET MOSFET %& ( ) * * ) MOSFET + * * Absolute Maximum Ratings Parameter Max. Units V 30 Gate-to-Source Voltage V GS I T = 25C Continuous Drain Current, V 10V 83 A D C GS I T = 100C Continuous Drain Current, V 10V 59 D C GS I Pulsed Drain Current 330 DM I T = 100C 170 Repetitive Peak Current RP C P T = 25C 330 Power Dissipation W D C P T = 100C 170 Power Dissipation D C 2.2 Linear Derating Factor W/C T Operating Junction and -40 to + 175 C J T Storage Temperature Range STG Soldering Temperature for 10 seconds 300 10lb in (1.1N m) Mounting Torque, 6-32 or M3 Screw N Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 0.45 JC R Case-to-Sink, Flat, Greased Surface 0.50 C/W CS Junction-to-Ambient R 62 JA Notes through are on page 8 www.irf.com 1 09/14/07 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV V = 0V, I = 250A Drain-to-Source Breakdown Voltage 150 V DSS GS D Reference to 25C, I = 1mA V /T Breakdown Voltage Temp. Coefficient 150 mV/C D DSS J R V = 10V, I = 33A Static Drain-to-Source On-Resistance 12 15 m DS(on) GS D V = V , I = 250A V Gate Threshold Voltage 3.0 5.0 V DS GS D GS(th) V /T Gate Threshold Voltage Coefficient -14 mV/C GS(th) J I V = 150V, V = 0V Drain-to-Source Leakage Current 20 A DS GS DSS V = 150V, V = 0V, T = 125C 1.0 mA DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS g V = 25V, I = 50A Forward Transconductance 170 S fs DS D V = 75V, I = 50A, V = 10V Q Total Gate Charge 71 107 nC DD D GS g Q Gate-to-Drain Charge 21 gd V = 75V, V = 10V t Turn-On Delay Time 18 DD GS d(on) I = 50A t Rise Time 59 ns r D t R = 2.5 Turn-Off Delay Time 24 d(off) G t Fall Time 33 See Fig. 22 f t V = 120V, V = 15V, R = 5.1 Shoot Through Blocking Time 100 ns st DD GS G L = 220nH, C= 0.3F, V = 15V GS 58 E V = 120V, R = 5.1, T = 25C Energy per Pulse J PULSE DS G J L = 220nH, C= 0.3F, V = 15V GS 110 V = 120V, R = 5.1, T = 100C DS G J C Input Capacitance 4530 V = 0V GS iss C V = 25V Output Capacitance 550 pF oss DS C = 1.0MHz Reverse Transfer Capacitance 100 rss V = 0V, V = 0V to 120V C eff. Effective Output Capacitance 480 oss GS DS L Internal Drain Inductance 4.5 Between lead, D D nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact Avalanche Characteristics Typ. Max. Parameter Units E 120 Single Pulse Avalanche Energy mJ AS E Repetitive Avalanche Energy 33 mJ AR V 180 Repetitive Avalanche Voltage V DS(Avalanche) I Avalanche Current 50 A AS Diode Characteristics Parameter Min. Typ. Max. Units Conditions I T = 25C MOSFET symbol Continuous Source Current 83 S C (Body Diode) A showing the I integral reverse Pulsed Source Current 330 SM p-n junction diode. (Body Diode) V T = 25C, I = 50A, V = 0V Diode Forward Voltage 1.3 V SD J S GS T = 25C, I = 50A, V = 50V t Reverse Recovery Time 76 110 ns J F DD rr Q Reverse Recovery Charge 230 350 nC di/dt = 100A/s rr 2 www.irf.com