HEXFET Power MOSFET V 25 V DS R DS(on) max 1.4 m ( V = 10V) GS V SD max 0.6 V ( I = 5.0A) S t 27 ns rr (typical) I D PQFN 5X6 mm 100 A ( T = 25C) mb Applications Synchronous MOSFET for high frequency buck converters Features and Benefits Benefits Features Low RDSon (<1.4m) Lower Conduction Losses Schottky Intrinsic Diode with Low Forward Voltage Lower Switching Losses Low Thermal Resistance to PCB (<0.8C/W) Enable better thermal dissipation 100% Rg tested Increased Reliability Low Profile (<0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Orderable part number Package Type Standard Pack Note Form Quantity IRFH5250DTRPBF PQFN 5mm x 6mm Tape and Reel 4000 IRFH5250DTR2PBF PQFN 5mm x 6mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 25 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 40 A GS D I T = 70C Continuous Drain Current, V 10V 32 A GS D 100 I T = 25C Continuous Drain Current, V 10V A D mb GS 100 I T = 100C Continuous Drain Current, V 10V mb GS D Pulsed Drain Current I 400 DM Power Dissipation P T = 25C 3.6 A D W Power Dissipation P T = 25C 156 mb D Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 25 V V = 0V, I = 1.0mA DSS GS D V / T Breakdown Voltage Temp. Coefficient -8.0 mV/C Reference to 25C, I = 10mA DSS J D R Static Drain-to-Source On-Resistance 1.0 1.4 V = 10V, I = 50A DS(on) GS D m 1.7 2.2 V = 4.5V, I = 50A GS D V Gate Threshold Voltage 1.35 1.80 2.35 V V = V , I = 150 A GS(th) DS GS D V Gate Threshold Voltage Coefficient -11 mV/C GS(th) I Drain-to-Source Leakage Current 500 V = 20V, V = 0V DSS A DS GS 5.0 V = 20V, V = 0V, T = 125C mA DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 120 S V = 13V, I = 50A DS D Q Total Gate Charge 83 nC V = 10V, V = 13V, I = 50A g GS DS D Q Total Gate Charge 39 59 g Q Pre-Vth Gate-to-Source Charge 11 V = 13V gs1 DS Q Post-Vth Gate-to-Source Charge 6.1 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 12 I = 50A gd D Q Gate Charge Overdrive 9.9 godr Q Switch Charge (Q + Q ) 18.1 sw gs2 gd Q Output Charge 36 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.4 G t Turn-On Delay Time 23 V = 13V, V = 4.5V d(on) DD GS t Rise Time 72 I = 50A r D ns t Turn-Off Delay Time 23 R =1.8 d(off) G t Fall Time 24 f C Input Capacitance 6115 V = 0V iss GS C Output Capacitance 1730 pF V = 13V oss DS C rss Reverse Transfer Capacitance 610 = 1.0MHz Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 470 mJ AS Avalanche Current I 50 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 100 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 400 S (Body Diode) p-n junction diode. V Diode Forward Voltage 0.6 V T = 25C, I = 5.0A, V = 0V SD J S GS V Diode Forward Voltage 1.0 V T = 25C, I = 50A, V = 0V SD J S GS t T = 25C, I = 50A, V = 13V Reverse Recovery Time 27 41 ns rr J F DD Q di/dt = 335A/s Reverse Recovery Charge 51 77 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units R Junction-to-Mounting Base 0.5 0.8 JC-mb Junction-to-Case C/W R (Top) 15 JC Junction-to-Ambient R 35 JA Junction-to-Ambient R (<10s) 22 JA