StrongIRFET IRFH8303PbF V 30 V DSS R max 1.10 m DS(on) Qg 58 nC (typical) R 1.0 G (typical) I D 100 A ( T = 25C) C (Bottom) PQFN 5 x 6 mm Applications Control MOSFET for synchronous buck converter Features Benefits Low R ( 1.10 m) Lower Conduction Losses DS(ON) Low Thermal Resistance to PCB (<0.8C/W) Enable better Thermal Dissipation 100% Rg Tested Increased Reliability Low Profile ( 0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easie r Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFH8303PbF PQFN 5 mm x 6 mm Tape and Reel 4000 IRFH8303TRPbF Absolute Maximum Ratings Parameter Max. Units V Gate-to-Source Voltage 20 V GS I T = 25C Continuous Drain Current, V 10V 43 D A GS I T = 25C Continuous Drain Current, V 10V 280 D C(Bottom) GS I T = 100C Continuous Drain Current, V 10V 177 D C(Bottom) GS A Continuous Drain Current, V 10V GS I T = 25C 100 D C (Source Bonding Technology Limited) I Pulsed Drain Current 400 DM P T = 25C Power Dissipation 3.7 W D A P T = 25C Power Dissipation 156 D C(Bottom) Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 C J T Storage Temperature Range STG Notes through are on page 9 1 2020-02-27 IRFH8303PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D Breakdown Voltage Temp. Coefficient 21 mV/C Reference to 25C, I = 1.0mA BV /T D DSS J R Static Drain-to-Source On-Resistance 0.90 1.10 V = 10V, I = 50A DS(on) GS D m 1.30 1.70 V = 4.5V, I = 50A GS D V Gate Threshold Voltage 1.2 1.7 2.2 V V = V , I = 150A GS(th) DS GS D Gate Threshold Voltage Coefficient -5.7 mV/C V GS(th) I Drain-to-Source Leakage Current 1.0 V = 24V, V = 0V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20 V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20 V GS gfs Forward Transconductance 158 S V = 15 V, I = 50A DS D Q Total Gate Charge 119 179 V = 10V, V = 15V, I = 50A g GS DS D Q Total Gate Charge 58 87 g V = 15V Q Pre-Vth Gate-to-Source Charge 14 gs1 DS Q Post-Vth Gate-to-Source Charge 8 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 19 I = 50A D gd Q Gate Charge Overdrive 17 godr Q Switch Charge (Q + Q) 27 sw gs2 gd Q Output Charge 33 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.0 G t Turn-On Delay Time 21 V = 30V, V = 4.5V d(on) DD GS t Rise Time 91 ns I = 50A r D t Turn-Off Delay Time 48 R = 1.8 d(off) G t Fall Time 65 f C Input Capacitance 7736 V = 0V iss GS C Output Capacitance 1363 pF V = 24V DS oss = 1.0MHz C Reverse Transfer Capacitance 743 rss Avalanche Characteristics Parameter Typ. Max. Units E Single Pulse Avalanche Energy 355 mJ AS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 100 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 400 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I =50A, V =0V SD J S GS t Reverse Recovery Time 33 50 ns T = 25C, I = 50A, V = 15V rr J F DD Q Reverse Recovery Charge 51 77 nC di/dt = 200A/s rr Thermal Resistance Parameter Typ. Max. Units Junction-to-Case 0.8 R (Bottom) JC Junction-to-Case 21 C/W R (Top) JC Junction-to-Ambient 34 R JA Junction-to-Ambient 21 R (<10s) JA 2 2020-02-27