HEXFET Power MOSFET V 25 V DS V 20 V GS max R DS(on) max 13.0 m ( V = 10V) GS Q g (typical) 4.3 nC ( V = 4.5V) GS I D 2mm x 2mm PQFN 8.5 A ( T = 25C) c(Bottom) Applications Features and Benefits Features Resulting Benefits Low R ( 13.0m) Lower Conduction Losses DSon Low Thermal Resistance to PCB ( 13C/W) Enable better thermal dissipation Low Profile ( 1.0 mm) results in Increased Power Density Compatible with Existing Surface Mount Techniques Easier Manufacturing Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRFHS8242TRPbF PQFN 2mm x 2mm Tape and Reel 4000 IRFHS8242TR2PbF PQFN 2mm x 2mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 25 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 9.9 A GS D I T = 70C Continuous Drain Current, V 10V 8.0 GS D A Continuous Drain Current, V 10V 21 I T = 25C D C(Bottom) GS A I T = 70C Continuous Drain Current, V 10V 17 C(Bottom) GS D I T = 25C Continuous Drain Current, V 10V (Package Limited) 8.5 C(Bottom) GS D Pulsed Drain Current I 84 DM Power Dissipation P T = 25C 2.1 A D W Power Dissipation P T = 70C 1.3 A D Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 2 TOP VIEW D1 6D D2 D 5D S G 3 4S Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 25 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 18 mV/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 10.0 13.0 V = 10V, I = 8.5A DS(on) GS D m 17.0 21.0 V = 4.5V, I = 6.8A GS D V Gate Threshold Voltage 1.35 1.8 2.35 V GS(th) V = V , I = 25 A DS GS D V Gate Threshold Voltage Coefficient -6.8 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 V = 20V, V = 0V DSS DS GS A 150 V = 20V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 19 S V = 10V, I = 8.5A DS D Total Gate Charge Q 4.3 nC V = 4.5V, V = 13V, I = 8.5A g GS DS D Total Gate Charge Q 10.4 V = 13V g DS Gate-to-Source Charge Q 1.8 nC V = 10V gs GS Gate-to-Drain Charge Q 1.6 I = 8.5A (See Fig. 6 & 16) gd D R Gate Resistance 1.9 G t Turn-On Delay Time 6.5 V = 13V, V = 4.5V d(on) DD GS t Rise Time 19 I = 8.5A r D ns t Turn-Off Delay Time 5.4 R =1.8 d(off) G t Fall Time 5.3 See Fig.17 f C Input Capacitance 653 V = 0V iss GS C Output Capacitance 171 pF V = 10V oss DS C Reverse Transfer Capacitance 78 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol S D 8.5 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 84 S (Body Diode) p-n junction diode. V T = 25C, I = 8.5A , V = 0V Diode Forward Voltage 1.0 V SD J S GS t Reverse Recovery Time 11 17 ns T = 25C, I = 8.5A , V = 13V rr J F DD Q Reverse Recovery Charge 11 17 nC di/dt = 280 A/ s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 13 JC Junction-to-Case R (Top) 90 C/W JC Junction-to-Ambient R 60 JA Junction-to-Ambient (<10s) R 42 JA Repetitive rating pulse width limited by max. junction temperature. Current limited by package. Pulse width 400 s duty cycle 2%. When mounted on 1 inch square copper board R is measured at T of approximately 90C. J For DESIGN AID ONLY, not subject to production testing.