HEXFET Power MOSFET V 30 V TOP VIEW DS V 20 V GS max D1 6D R DS(on) max 16.0 m ( V = 10V) GS D2 D 5D Q g(typical) 4.2 nC ( V = 4.5V) GS S G 3 4S I D 2mm x 2mm PQFN 8.5 A ( T = 25C) c(Bottom) Applications Control MOSFET for Buck Converters System/Load Switch Features and Benefits Features Resulting Benefits Low R ( 16.0m) Lower Conduction Losses DSon Low Thermal Resistance to PCB ( 13C/W) Enable better thermal dissipation Low Profile ( 1.0 mm) results in Increased Power Density Compatible with Existing Surface Mount Techniques Easier Manufacturing Environmentally Friendlier RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification Increased Reliability Standard Pack Orderable part number Package Type Note Form Quantity IRFHS8342TRPbF PQFN 2mm x 2mm Tape and Reel 4000 IRFHS8342TR2PbF PQFN 2mm x 2mm Tape and Reel 400 EOL notice 259 Absolute Maximum Ratings Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 8.8 A GS D I T = 70C Continuous Drain Current, V 10V 7.1 A GS D I T = 25C Continuous Drain Current, V 10V 19 C(Bottom) GS D A I T = 70C Continuous Drain Current, V 10V 15 C(Bottom) GS D Continuous Drain Current, V 10V (Package Limited) 8.5 I T = 25C D C(Bottom) GS Pulsed Drain Current I 76 DM Power Dissipation P T = 25C 2.1 D A W Power Dissipation P T = 70C 1.3 D A Linear Derating Factor 0.02 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 2 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 22 mV/C = 1mA Reference to 25C, I DSS J D R Static Drain-to-Source On-Resistance 13 16 V = 10V, I = 8.5A DS(on) GS D m 20 25 = 4.5V, I = 6.8A V GS D V Gate Threshold Voltage 1.35 1.8 2.35 V GS(th) V = V , I = 25A DS GS D V Gate Threshold Voltage Coefficient -5.8 mV/C GS(th) I Drain-to-Source Leakage Current 1.0 = 24V, V = 0V V DSS DS GS A 150 V = 24V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 20V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 18 S V = 10V, I = 8.5A DS D Q Total Gate Charge 4.2 nC V = 4.5V, V = 15V, I = 8.5A g GS DS D Q Total Gate Charge 8.7 V = 15V g DS Q Gate-to-Source Charge 1.5 nC V = 10V gs GS Q Gate-to-Drain Charge 1.3 I = 8.5A (See Fig. 6 & 16) gd D Q Output Charge 3.0 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.9 G t Turn-On Delay Time 5.9 V = 15V, V = 4.5V d(on) DD GS t Rise Time 15 I = 8.5A r D ns t Turn-Off Delay Time 5.2 R =1.8 d(off) G t Fall Time 5.0 See Fig.17 f C Input Capacitance 600 V = 0V iss GS C Output Capacitance 100 pF V = 25V oss DS C Reverse Transfer Capacitance 46 = 1.0MHz rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 8.5 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 76 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 8.5A , V = 0V SD J S GS t Reverse Recovery Time 11 17 ns T = 25C, I = 8.5A , V = 15V rr J F DD Q Reverse Recovery Charge 13 20 nC di/dt = 330A/s rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R (Bottom) 13 JC Junction-to-Case R (Top) 90 C/W JC Junction-to-Ambient R 60 JA Junction-to-Ambient (<10s) R 42 JA Repetitive rating pulse width limited by max. junction temperature. Current limited by package. Pulse width 400 s duty cycle 2%. When mounted on 1 inch square copper board R is measured at T of approximately 90C. J