IRFR8314PbF HEXFET Power MOSFET Application V 30 V DSS D Optimized for UPS/Inverter Applications R max DS(on) Low Voltage Power Tools 2.2 ( V = 10V) GS m G ( V = 4.5V) 3.1 GS S Qg 40 nC (typical) Benefits I 179 D (Silicon Limited) Fully Characterized Avalanche Voltage and Current A I 90A D (Package Limited) Lead-Free, RoHS Compliant D S G D-Pak G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFR8314PbF D-Pak Tape and Reel 2000 IRFR8314TRPbF Absolute Maximum Rating Symbol Parameter Max. Units V Drain-to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 179 A D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 127 D C GS I T = 25C Continuous Drain Current, V 10V (Package Limited) 90 D C GS I Pulsed Drain Current 357 DM P T = 25C Maximum Power Dissipation 125 W D C P T = 100C Maximum Power Dissipation 63 W D C Linear Derating Factor 0.83 W/C T Operating Junction and J -55 to + 175 C T Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.2 JC Junction-to-Ambient (PCB Mount) R 50 C/W JA Junction-to-Ambient R 110 JA Notes through are on page 9 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback July 01, 2014 IRFR8314PbF Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A DSS GS D BV / T Breakdown Voltage Temp. Coefficient 18 mV/C Reference to 25C, I = 1mA D DSS J R Static Drain-to-Source On-Resistance 1.6 2.2 m V = 10V, I = 90A DS(on) GS D 2.6 3.1 V = 4.5V, I = 72A GS D V Gate Threshold Voltage 1.2 1.7 2.2 V V = V , I = 100A GS(th) DS GS D V / T Gate Threshold Voltage Coefficient -7.0 mV/C GS(th) J 1.0 V =24 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V =24V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 189 S V = 15V, I =72A DS D Q Total Gate Charge 36 54 g Q Pre-Vth Gate-to-Source Charge 10 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 7.7 nC V = 4.5V gs2 GS Q Gate-to-Drain Charge 10 I = 72A gd D Q Gate Charge Overdrive 8.3 godr Q Switch Charge (Qgs2 + Qgd) 20 sw R Gate Resistance 2.0 G t Turn-On Delay Time 19 V = 15V d(on) DD t Rise Time 98 ns I = 72A r D t Turn-Off Delay Time 28 R = 1.8 d(off) G t Fall Time 30 V = 4.5V f GS C Input Capacitance 4945 V = 0V iss GS C Output Capacitance 908 pF V = 15V oss DS = 1.0MHz C Reverse Transfer Capacitance 493 rss Avalanche Characteristics E Single Pulse Avalanche Energy 180 AS (Thermally limited) mJ E Single Pulse Avalanche Energy Tested Value 279 AS (tested) I Avalanche Current 72 A A Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 179 S (Body Diode) showing the A Pulsed Source Current integral reverse I 357 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C,I = 72A,V = 0V SD J S GS t Reverse Recovery Time 31 47 ns T = 25C I = 72A ,V =15V rr J F DD Q Reverse Recovery Charge 87 130 nC di/dt = 360A/s rr 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback July 01, 2014