HEXFET Power MOSFET V 100 V DS R DS(on) max 9.9 m ( V = 4.5V) GS Q 44 nC g (typical) R 1.2 G (typical) I D 88 A ( T = 25C) PQFN 5X6 mm mb Applications Secondary Side Synchronous Rectification Inverters for DC Motors DC-DC Brick Applications Boost Converters Benefits Features Low R ( 9.0m ) Lower Conduction Losses DSon Low Thermal Resistance to PCB ( 0.8C/W) Enable better thermal dissipation 100% Rg tested Increased Reliability Low Profile ( 0.9 mm) results in Increased Power Density Industry-Standard Pinout Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant Containing no Lead, no Bromide and no Halogen Environmentally Friendlier MSL1, Industrial Qualification Increased Reliability Base Part Number Package Type Standard Pack Orderable part number Form Quantity IRLH5030PBF PQFN 5mm x 6mm Tape and Reel 4000 IRLH5030TRPBF Absolute Maximum Ratings Parameter Max. Units V V Gate-to-Source Voltage 16 GS I T = 25C Continuous Drain Current, V 10V 13 D A GS I T = 70C Continuous Drain Current, V 10V 11 D A GS A I T = 25C Continuous Drain Current, V 10V 88 D mb GS I T = 100C Continuous Drain Current, V 10V 56 D mb GS I Pulsed Drain Current 400 DM Power Dissipation P T = 25C 3.6 D A W Power Dissipation P T = 25C 156 D mb Linear Derating Factor 0.029 W/C T Operating Junction and -55 to + 150 J C T Storage Temperature Range STG Notes through are on page 9 IRLH5030PbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250 A DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.10 V/C Reference to 25C, I = 1mA DSS J D R Static Drain-to-Source On-Resistance 7.2 9.0 V = 10V, I = 50A DS(on) GS D m 7.9 9.9 V = 4.5V, I = 50A GS D V Gate Threshold Voltage 1.0 2.5 V GS(th) V = V , I = 150 A DS GS D V Gate Threshold Voltage Coefficient -5.9 mV/C GS(th) I Drain-to-Source Leakage Current 20 V = 100V, V = 0V DSS DS GS A 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 V = 16V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -16V GS gfs Forward Transconductance 160 S V = 50V, I = 50A DS D Q Total Gate Charge 94 nC V = 10V, V = 50V, I = 50A g GS DS D Q Total Gate Charge 44 66 g Q Pre-Vth Gate-to-Source Charge 7.7 V = 50V gs1 DS Q Post-Vth Gate-to-Source Charge 4.0 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 22 I = 50A gd D Q Gate Charge Overdrive 10.3 See Fig.17 & 18 godr Q Switch Charge (Q + Q ) 26 sw gs2 gd Q Output Charge 20 nC V = 16V, V = 0V oss DS GS R Gate Resistance 1.2 G t Turn-On Delay Time 21 V = 50V, V = 4.5V d(on) DD GS t Rise Time 72 I = 50A r D ns t Turn-Off Delay Time 41 R =1.8 d(off) G t Fall Time 41 See Fig.15 f C Input Capacitance 5185 V = 0V iss GS C Output Capacitance 300 pF V = 50V oss DS C Reverse Transfer Capacitance 150 = 1.0MHz rss Avalanche Characteristics Parameter Typ. Max. Units Single Pulse Avalanche Energy E 230 mJ AS Avalanche Current I 50 A AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current MOSFET symbol D S 100 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 400 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C, I = 50A, V = 0V SD J S GS t Reverse Recovery Time 32 48 ns T = 25C, I = 50A, V = 50V rr J F DD Q di/dt = 500A/ s Reverse Recovery Charge 190 285 nC rr t Forward Turn-On Time Time is dominated by parasitic Inductance on Thermal Resistance Parameter Typ. Max. Units R Junction-to-Mounting Base 0.5 0.8 JC-mb Junction-to-Case R (Top) 15 C/W JC R Junction-to-Ambient 35 JA Junction-to-Ambient R (<10s) 33 JA