SPD08N50C3 Cool MOS Power Transistor V T 560 V DS jmax Feature R 0.6 DS(on) New revolutionary high voltage technology I 7.6 A D Worldwide best R in TO-252 DS(on) PG-TO252 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance a) , available in Halogen free mold compound Fully qualified according to JEDEC for Industrial Applications Type Package Ordering Code Marking SPD08N50C3 PG-TO252 Q67040-S4569 08N50C3 Maximum Ratings, at T = 25C, unless otherwise specified C Parameter Symbol Value Unit A Continuous drain current I D T = 25 C 7.6 C T = 100 C 4.6 C 22.8 Pulsed drain current, t limited by T I p jmax D puls 230 mJ Avalanche energy, single pulse E AS I =5.5A, V =50V D DD 1) E 0.5 Avalanche energy, repetitive t limited by T AR AR jmax I =7.6A, V =50V D DD 7.6 A Avalanche current, repetitive t limited by T I AR jmax AR Gate source voltage V V 20 GS V Gate source voltage AC (f >1Hz) 30 GS P 83 W Power dissipation, T = 25C tot C C Operating and storage temperature T , T -55... +150 j stg 6) dv/dt Reverse diode dv/dt 15 V/ns a) non-Halogen free (OPN: SPD08N5 0C3BT), Halogen free (OPN: SPD08N50C3AT) Rev. 2.7 Page 1 2020-05-15 SPD08N50C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope dv/dt 50 V/ns V = 400 V, I = 7.6 A, T = 125 C DS D j Thermal Characteristics Parameter Symbol Values Unit min. typ. max. R - - 1.5 K/W Thermal resistance, junction - case thJC R - - 75 Thermal resistance, junction - ambient, leaded thJA SMD version, device on PCB: R thJA min. footprint - - 75 2 2) 6 cm cooling area - - 50 - - 260 C Soldering temperature, reflow soldering, MSL3 T sold 3) 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. V V =0V, I =0.25mA 500 - - V Drain-source breakdown voltage (BR)DSS GS D V =0V, I =7.6A - 600 - Drain-Source avalanche V GS D (BR)DS breakdown voltage I =350, V =V 2.1 3 3.9 Gate threshold voltage V D GS DS GS(th) V =500V, V =0V, A Zero gate voltage drain current I DS GS DSS T =25C, - 0.5 1 j T =150C - - 100 j V =20V, V =0V - - 100 nA Gate-source leakage current I GS DS GSS V =10V, I =4.6A, Drain-source on-state resistance R GS D DS(on) T =25C - 0.5 0.6 j T =150C - 1.5 - j R f=1MHz, open Drain - 1.2 - Gate input resistance G Rev. 2.7 Page 2 2020-05-15