X-On Electronics has gained recognition as a prominent supplier of IXBOD1-07 Sidacs across the USA, India, Europe, Australia, and various other global locations. IXBOD1-07 Sidacs are a product manufactured by IXYS. We provide cost-effective solutions for Sidacs, ensuring timely deliveries around the world.

IXBOD1-07 IXYS

IXBOD1-07 electronic component of IXYS
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Part No.IXBOD1-07
Manufacturer: IXYS
Category: Sidacs
Description: IXYS Sidacs 1 Amps 700V
Datasheet: IXBOD1-07 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 17.116 ea
Line Total: USD 17.12 
Availability - 97
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
97
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 17.116
10 : USD 16.424
30 : USD 15.2215
100 : USD 14.1738

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Breakover Voltage VBO
Breakover Current IBO Max
Non Repetitive On-State Current
Holding Current Ih Max
On-State Voltage
Maximum Operating Temperature
Mounting Style
Package / Case
Series
Minimum Operating Temperature
Packaging
Current Rating
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IXBOD1-07 from our Sidacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXBOD1-07 and other electronic components in the Sidacs category and beyond.

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IXBOD1 1 V = 600-1000 V BO Breakover Diode Gen I = 0.9 A AVM (BOD1) V BO Standard Types V 600 50 IXBOD1-06 700 50 IXBOD1-07 800 50 IXBOD1-08 900 50 IXBOD1-09 1000 50 IXBOD1-10 Backside: isolated A K Features / Advantages: Applications: Package: FP-Case Fast turn on High voltage circuit protection Industry standard outline Low temperature dependance Transient voltage protection RoHS compliant Low leakage current Trigger device Epoxy meets UL 94V-0 Power pulse generators Soldering pins for PCB mounting Lightning and arcing protection Base plate: Plastic overmolded tab Energy discharge circuits Reduced weight Battery overvoltage protection Solar array protection Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise speci ed 20210720b 2020 IXYS All rights reserved 1 - 5IXBOD1 BOD1 Ratings Symbol De nitions Conditions min. typ. max. drain current I V = 0.8V T = 125C 20 A D D BO VJ breakover voltage V V (T ) = V 1 + K (T - 25C) V BO BO VJ BO, 25C T VJ RMS current I f = 50 Hz T = 50C 1.4 A RMS amb pins soldered to printed circuit (conductor 0.035x2mm) I maximum average forward current 0.9 A FAVM I maximum pulsed source current t = 0.1 ms non repetitive T = 50C 200 A SM p amb 2 2 2 I t value for fusing I t t = 0.1 ms T = 50C 2 A s p amb -3 -1 K 210 K temperature coef cient of V T BO coef cient for energy per pulse EP (material constant) K 700 K/Ws P thermal resistance junction to ambient R natural convection 60 K/W thJA with air speed 2 m/s 45 K/W I breakover current T = 25C 15 mA BO VJ I holding current T = 25C 30 mA H VJ holding voltage V T = 25C 4 8 V H VJ (dv/dt) critical rate of rise of voltage V = 0.67(V +100 V) T = 50C 1000 V/s cr D BO VJ critical rate of rise of curent (di/dt) V = V I = 80 A f = 50 Hz T = 125C 200 A/s cr D BO T VJ t turn-off time V = 0.67V V = 0 V I = 80 A T = 125C 150 s q D BO R T VJ dv/dt = 200 V/s di/dt = -10 A/s (lin.) forward voltage drop V I = 5 A T = 125C 1.7 V T T VJ V threshold voltage 1.1 V T0 for power-loss calculation only T = 125C VJ slope resistance r 0.12 T IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise speci ed 20210720b 2020 IXYS All rights reserved 2 - 5

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS
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