TM Linear Power MOSFET V = 1000V IXTK22N100L DSS I = 22A w/ Extended FBSOA IXTX22N100L D25 R 600m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) G Symbol Test Conditions Maximum Ratings D S V T = 25C to 150C 1000 V DSS J Tab V T = 25C to 150C, R = 1M 1000 V DGR J GS V Continuous 30 V GSS PLUS247 (IXTX) V Transient 40 V GSM I T = 25C 22 A D25 C I T = 25C, Pulse Width Limited by T 50 A DM C JM I T = 25C 22 A G A C D Tab S E T = 25C 1.5 J AS C P T = 25C 700 W D C G = Gate D = Drain S = Source Tab = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T 1.6mm (0.063 in.) from Case for 10s 300 C Features L T Plastic Body for 10s 260 C SOLD Designed for Linear Operation M Mounting Torque (IXTK) 1.13/10 Nm/lb.in. d Avalanche Rated F Mounting Force (IXTX) 20..120 / 4.5..27 N/lb. C Molding Epoxy Meets UL94 V-0 Weight TO-264 10 g Flammability Classification PLUS247 6 g Advantages Easy to Mount Space Savings High Power Density Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 1mA 1000 V DSS GS D Applications V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D Programmable Loads I V = 30V, V = 0V 200 nA Current Regulators GSS GS DS DC-DC Converters I V = V , V = 0V 50 A DSS DS DSS GS Battery Chargers T = 125C 1 mA J DC Choppers R V = 20V, I = 0.5 I , Note 1 600 m Temperature and Lighting Controls DS(on) GS D DSS 2010 IXYS CORPORATION, All Rights Reserved DS99293D(10/10) IXTK22N100L IXTX22N100L Symbol Test Conditions Characteristic Values TO-264 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 4.5 7.0 9.5 S fs DS D DSS C 7050 pF iss C V = 0V, V = 25V, f = 1MHz 600 pF oss GS DS C 100 pF rss t 36 ns d(on) Resistive Switching Times t 35 ns r V = 15V, V = 0.5 V , I = 0.5 I 1 - Gate GS DS DSS D DSS 2 - Drain t 80 ns d(off) 3 - Source R = 2 (External) G 4 - Drain t 50 ns f Millimeter Inches Dim. Q 270 nC Min. Max. Min. Max. g(on) A 4.82 5.13 .190 .202 Q V = 15V, V = 0.5 V , I = 0.5 I 70 nC A1 2.54 2.89 .100 .114 gs GS DS DSS D DSS A2 2.00 2.10 .079 .083 Q 110 nC gd b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 R 0.18 C/W b2 2.90 3.09 .114 .122 thJC c 0.53 0.83 .021 .033 R 0.15 C/W thCS D 25.91 26.16 1.020 1.030 E 19.81 19.96 .780 .786 e 5.46 BSC .215 BSC J 0.00 0.25 .000 .010 K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 Safe-Operating-Area Specification L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Symbol Test Conditions Characteristic Values Q1 8.38 8.69 .330 .342 Min. Typ. Max. R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 SOA V = 800V, I = 0.3A, T = 90C , tp = 5s 240 W DS D C S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 TM PLUS 247 Outline Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 22 A S GS I Repetitive, Pulse Width Limited by T 50 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 1000 ns rr I = I , -di/dt = 100A/s, V = 100V, V = 0V F S R GS Terminals: 1 - Gate 2 - Drain 3 - Source Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 Note 1. Pulse test, t 300s, duty cycle, d 2%. A 2.29 2.54 .090 .100 1 A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 b 1.91 2.13 .075 .084 1 b 2.92 3.12 .115 .123 2 C 0.61 0.80 .024 .031 D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537