Advance Technical Information TM TM TrenchT2 GigaMOS V = 55V IXTK550N055T2 DSS I = 550A Power MOSFET IXTX550N055T2 D25 R 1.6m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-264 (IXTK) Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings G V T = 25C to 175C55V Tab DSS J D S V T = 25C to 175C, R = 1M 55 V DGR J GS V Continuous 20 V GSS PLUS247 (IXTX) V Transient 30 V GSM I T = 25C (Chip Capability) 550 A D25 C I External Lead Current Limit 160 A L(RMS) I T = 25C, Pulse Width Limited by T 1375 A DM C JM I T = 25C 200 A A C G E T = 25C3J Tab D AS C S P T = 25C 1250 W D C G = Gate D = Drain T -55 ... +175 C J S = Source Tab = Drain T 175 C JM T -55 ... +175 C stg Features T 1.6mm (0.062 in.) from Case for 10s 300 C L T Plastic Body for 10s 260 C SOLD z International Standard Packages z M Mounting Torque (TO-264) 1.13/10 Nm/lb.in. High Current Handling Capability d z Fast Intrinsic Diode F Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. C z Avalanche Rated Weight TO-264 10 g z Low R PLUS247 6 g DS(on) Advantages z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values z High Power Density (T = 25C Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 250A 55 V DSS GS D z V V = V , I = 250A 2.0 4.0 V DC-DC Converters and Off-Line UPS GS(th) DS GS D z Primary-Side Switch I V = 20V, V = 0V 200 nA z GSS GS DS High Speed Power Switching Applications I V = V , V = 0V 10 A DSS DS DSS GS T = 150C 1 mA J R V = 10V, I = 100A, Notes 1 & 2 1.6 m DS(on) GS D 2009 IXYS CORPORATION, All Rights Reserved DS100217(11/09)IXTK550N055T2 IXTX550N055T2 Symbol Test Conditions Characteristic Values TO-264 (IXTK) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 90 150 S fs DS D C 40 nF iss C V = 0V, V = 25V, f = 1MHz 4970 pF oss GS DS C 1020 pF rss R Gate Input Resistance 1.36 GI t 45 ns d(on) Resistive Switching Times t 40 ns r V = 10V, V = 0.5 V , I = 200A GS DS DSS D t 90 ns Millimeter Inches d(off) R = 1 (External) Dim. G Min. Max. Min. Max. t 230 ns A 4.82 5.13 .190 .202 f A1 2.54 2.89 .100 .114 A2 2.00 2.10 .079 .083 Q 595 nC g(on) b 1.12 1.42 .044 .056 Q V = 10V, V = 0.5 V , I = 0.5 I 150 nC b1 2.39 2.69 .094 .106 gs GS DS DSS D DSS b2 2.90 3.09 .114 .122 Q 163 nC c 0.53 0.83 .021 .033 gd D 25.91 26.16 1.020 1.030 R 0.12 C/W E 19.81 19.96 .780 .786 thJC e 5.46 BSC .215 BSC R 0.15 C/W J 0.00 0.25 .000 .010 thCS K 0.00 0.25 .000 .010 L 20.32 20.83 .800 .820 L1 2.29 2.59 .090 .102 P 3.17 3.66 .125 .144 Q 6.07 6.27 .239 .247 Q1 8.38 8.69 .330 .342 Source-Drain Diode R 3.81 4.32 .150 .170 R1 1.78 2.29 .070 .090 Symbol Test Conditions Characteristic Values S 6.04 6.30 .238 .248 T 1.57 1.83 .062 .072 (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J TM I V = 0V 550 A PLUS 247 (IXTX) Outline S GS I Repetitive, Pulse Width Limited by T 1700 A SM JM V I = 100A, V = 0V, Note 1 1.2 V SD F GS t 100 ns rr I = 100A, V = 0V F GS I 5 A RM -di/dt = 100A/s Q 250 nC RM V = 27.5V R Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Includes lead resistance. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Dim. Millimeter Inches Min. Max. Min. Max. A 4.83 5.21 .190 .205 A 2.29 2.54 .090 .100 1 ADVANCE TECHNICAL INFORMATION A 1.91 2.16 .075 .085 2 b 1.14 1.40 .045 .055 The product presented herein is under development. The Technical Specifications offered are derived b 1.91 2.13 .075 .084 1 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a b 2.92 3.12 .115 .123 2considered reflectio of the anticipated result. IXYS reserves the right to change limits, test C 0.61 0.80 .024 .031 conditions, and dimensions without notice. D 20.80 21.34 .819 .840 E 15.75 16.13 .620 .635 e 5.45 BSC .215 BSC L 19.81 20.32 .780 .800 L1 3.81 4.32 .150 .170 Q 5.59 6.20 .220 0.244 R 4.32 4.83 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537