TM IXTH 88N30P V = 300 V PolarHT DSS IXTK 88N30P I = 88 A D25 Power MOSFET IXTQ 88N30P R 40 m DS(on) IXTT 88N30P N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings D (TAB) G D V T = 25 C to 150 C 300 V DSS J S V T = 25 C to 150 C R = 1 M 300 V DGR J GS V Continuous 20 V GS TO-264 (IXTK) V Transient 30 V GSM I T = 25C88A D25 C I External lead current limit 75 A D(RMS) I T = 25 C, pulse width limited by T 220 A DM C JM G I T = 25C60A D AR C S E T = 25C60mJ AR C D (TAB) E T = 25 C 2.0 J AS C TO-3P (IXTQ) dv/dt I I , di/dt 100 A/s, V V 10 V/ns S DM DD DSS T 150C, R = 4 J G P T = 25 C 600 W D C T -55 ... +150 C J T 150 C JM G T -55 ... +150 C stg D (TAB) S T 1.6 mm (0.062 in.) from case for 10 s 300 C L TO-268 (IXTT) T Plastic body for 10 s 260 C SOLD M Mounting torque 1.13/10 Nm/lb.in. d Weight TO-247 6.0 g G TO-264 10 g S D (TAB) TO-3P & TO-268 5.5 g G = Gate D = Drain S = Source TAB = Drain Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. J Features l International standard package BV V = 0 V, I = 250 A 300 V DSS GS D l Unclamped Inductive Switching (UIS) V V = V , I = 250A 2.5 5.0 V rated GS(th) DS GS D l Low package inductance I V = 20 V , V = 0 100 nA GSS GS DC DS - easy to drive and to protect I V = V 100 A DSS DS DSS Advantages V = 0 V T = 125C1mA GS J l Easy to mount l Space savings R V = 10 V, I = 0.5 I 40 m DS(on) GS D D25 l High power density Pulse test, t 300 s, duty cycle d 2 % DS99129E(12/05) 2006 IXYS All rights reservedIXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P Symbol Test Conditions Characteristic Values (T = 25 C unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 45 60 S fs DS D D25 C 6300 pF iss C V = 0 V, V = 25 V, f = 1 MHz 950 pF oss GS DS C 190 pF rss t 25 ns d(on) t V = 10 V, V = 0.5 V , I = 60 A 24 ns r GS DS DSS D t R = 3.3 (External) 96 ns d(off) G t 25 ns f Q 180 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 44 nC gs GS DS DSS D D25 Q 90 nC gd R 0.21 C/W thJC R TO-247 and TO-3P 0.21 C/W thCS R TO-264 0.15 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 88 A S GS I Repetitive 220 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 25 A, -di/dt = 100 A/s 250 ns rr F Q V = 100 V, V = 0 V 3.3 C RM R GS Characteristic Curves Fig. 2. Extended Output Characteristics Fig. 1. Output Characteristics 25C 25C 90 200 V = 10V V = 10V GS GS 180 80 9V 9V 160 8V 70 140 8V 60 120 50 7V 100 7V 40 80 30 60 20 6V 40 6V 10 20 5V 5V 0 0 02 46 8 10 12 14 16 18 20 00.511.5 22.533.5 4 V - Volts V - Volts D S D S IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 I - Amperes D I - Amperes D