Preliminary Technical Information X2-Class V = 700V IXTP12N70X2M DSS Power MOSFET I = 12A D25 R 300m DS(on) (Electrically Isolated Tab) OVERMOLDED N-Channel Enhancement Mode TO-220 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 700 V G DSS J Isolated Tab D S V T = 25 C to 150 C, R = 1M 700 V DGR J GS V Continuous 30 V GSS G = Gate D = Drain V Transient 40 V S = Source GSM I T = 25 C, Limited by T 12 A D25 C JM I T = 25 C, Pulse Width Limited by T 24 A DM C JM I T = 25 C6A A C E T = 25 C 300 mJ AS C dv/dt I I , V V , T 150C 50 V/ns Features S DM DD DSS J P T = 25 C40W D C International Standard Package T -55 ... +150 C J Plastic Overmolded Tab T 150 C JM High Voltage Package T -55 ... +150 C Low R and Q stg DS(ON) G Avalanche Rated T Maximum Lead Temperature for Soldering 300 C L 2500V~ Electrical Isolation T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Low Package Inductance V 50/60 Hz, 1 Minute 2500 V~ ISOL M Mounting Torque 1.13 / 10 Nm/lb.in Advantages d Weight 2.5 g High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 700 V Switch-Mode and Resonant-Mode DSS GS D Power Supplies V V = V , I = 250A 2.5 4.5 V DC-DC Converters GS(th) DS GS D PFC Circuits I V = 30V, V = 0V 100 nA GSS GS DS AC and DC Motor Drives Robotics and Servo Controls I V = V , V = 0V 5 A DSS DS DSS GS T = 125C 50 A J R V = 10V, I = 6A, Note 1 300 m DS(on) GS D 2018 IXYS CORPORATION, All Rights Reserved DS100781A(10/18)IXTP12N70X2M Symbol Test Conditions Characteristic Values OVERMOLDED TO-220 (T = 25C, Unless Otherwise Specified) Min. Typ. Max J (IXTP...M) oP g V = 10V, I = 6A, Note 1 7 12 S fs DS D R Gate Input Resistance 3.7 Gi C 960 pF iss C V = 0V, V = 25V, f = 1MHz 920 pF oss GS DS C 2 pF rss 1 2 3 Effective Output Capacitance C 58 pF o(er) Energy related V = 0V GS C 200 pF V = 0.8 V o(tr) Time related DS DSS t 24 ns d(on) Resistive Switching Times t 30 ns r V = 10V, V = 0.5 V , I = 6A GS DS DSS D t 78 ns d(off) Terminals: 1 - Gate R = 30 (External) G 2 - Drain t 27 ns f 3 - Source Q 19 nC g(on) Q V = 10V, V = 0.5 V , I = 6A 5 nC gs GS DS DSS D Q 8 nC gd R 3.10 C/W thJC R 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 12 A S GS I Repetitive, pulse Width Limited by T 48 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 270 ns rr I = 6A, -di/dt = 100A/ s F Q 2.8 C RM V = 100V R I 21 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537