TM V = 600V Polar IXTA14N60P DSS I = 14A Power MOSFET IXTP14N60P D25 R 550m DS(on) IXTQ14N60P Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) V T = 25 C to 150 C 600 V DSS J V T = 25 C to 150 C, R = 1M 600 V DGR J GS V Continuous 30 V GSS V Transient 40 V G GSM D D (Tab) S I T = 25 C14A D25 C TO-3P (IXTQ) I T = 25 C, pulse width limited by T 42 A DM C JM I T = 25 C 14 A A C E T = 25 C 900 mJ AS C G D P T = 25 C 300 W D C S T -55 ... +150 C D (Tab) J T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C G = Gate D = Drain L T Plastic Body for 10s 260 C S = Source Tab = Drain SOLD M Mounting torque (TO-220 &TO-3P) 1.13/10 Nm/lb.in. d Weight TO-263 2.5 g Features TO-220 3.0 g TO-3P 5.5 g International Standard Packages Fast Intrinsic Rectifier Avalanche Rated Low R and Q DS(ON) G Low Package Inductance Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, unless otherwise specified) Min. Typ. Max. J Easy to Mount Space Savings BV V = 0V, I = 250A 600 V DSS GS D V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D Applications I V = 30V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 5 A Switch-Mode and Resonant-Mode DSS DS DSS GS Power Supplies T = 125C 100 A J DC-DC Converters R V = 10V, I = 0.5 I , Note 1 450 550 m DS(on) GS D D25 Laser Drivers AC and DC Motor Drives Robotics and Servo Controls 2015 IXYS CORPORATION, All Rights Reserved DS99329G(10/15) IXTA14N60P IXTP14N60P IXTQ14N60P Symbol Test Conditions Characteristic Values TO-220 Outline E A (T = 25 C, unless otherwise specified) Min. Typ. Max. oP J A1 g V = 20V, I = 0.5 I , Note 1 7 13 S fs DS D D25 H1 Q D2 C 2500 pF D iss D1 C V = 0V, V = 25V, f = 1MHz 215 pF oss GS DS E1 C 13 pF rss A2 EJECTOREJECTOREJECTOREJECTOREJECTOR PINPINPINPINPIN L1 t 23 ns d(on) L Resistive Switching Times t 27 ns r = 10V, V = 0.5 V , I = 0.5 I V GS DS DSS D D25 ee c 3X b t 70 ns d(off) e1e1 3X b2 R = 10 (External) G 1 - Gate t 26 ns f 2,4 - Drain 3 - Source Q 36 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 16 nC gs GS DS DSS D D25 Q 12 nC gd R 0.42 C/W thJC R (TO-220) 0.50 C/W thCS (TO-3P 0.25 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, unless otherwise specified) Min. Typ. Max. J I V = 0V 14 A S GS I Repetitive, pulse width limited by T 42 A SM JM TO-3P Outline V I = I , V = 0V, Note 1 1.5 V SD F S GS A 0P E E1 0P1 I = 14A, -di/dt = 100A/ s A2 t 500 ns F rr S V = 100V, V = 0V + + + R GS D1 D 4 1 2 3 L1 A1 Note 1: Pulse test, t 300 s duty cycle, d 2%. c b b2 b4 e TO-263 (IXTA) Outline PINS: 1 - Gate 2, 4 - Drain 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537