X4-Class V = 135V IXTP170N13X4 DSS TM Power MOSFET I = 170A D25 D R 6.30m DS(on) N-Channel Enhancement Mode Avalanche Rated G S TO-220 (IXTP) Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C 135 V G DSS J D S V T = 25 C to 175 C, R = 1M 135 V D (Tab) DGR J GS V Continuous 20 V GSS V Transient 30 V G = Gate D = Drain GSM S = Source Tab = Drain I T = 25 C (Chip Capability) 170 A D25 C I External Lead Current Limit 120 A L(RMS) I T = 25 C, Pulse Width Limited by T 340 A DM C JM I T = 25 C85A A C E T = 25 C1J AS C Features dv/dt I I , V V , T 150C 50 V/ns S DM DD DSS J P T = 25 C 480 W International Standard Package D C Low R and Q DS(ON) G T -55 ... +175 C J Avalanche Rated T 175 C JM Low Package Inductance T -55 ... +175 C stg T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Advantages M Mounting Torque 1.13 / 10 Nm/lb.in d High Power Density Weight 3 g Easy to Mount Space Savings Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Switch-Mode and Resonant-Mode BV V = 0V, I = 250A 135 V Power Supplies DSS GS D DC-DC Converters V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D PFC Circuits AC and DC Motor Drives I V = 20V, V = 0V 100 nA GSS GS DS Robotics and Servo Controls I V = V , V = 0V 10 A DSS DS DSS GS T = 150C 500 A J R V = 10V, I = 0.5 I , Note 1 5.15 6.30 m DS(on) GS D D25 2019 IXYS CORPORATION, All Rights Reserved. DS100949B(11/19) IXTP170N13X4 Symbol Test Conditions Characteristic Values TO-220 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max J E A 0P A1 g V = 20V, I = 60A, Note 1 70 120 S fs DS D H1 Q R Gate Input Resistance 0.9 Gi D2 D C 5460 pF iss D1 C V = 0V, V = 25V, f = 1MHz 960 pF 4 oss GS DS 1 2 3 E1 C 29 pF rss A2 EJECTOR PIN L1 Effective Output Capacitance L C 720 pF o(er) Energy related V = 0V GS C 1800 pF V = 0.8 V o(tr) Time related DS DSS e c 3X b e1 t 26 ns 3X b2 d(on) Resistive Switching Times 1 - Gate t 8 ns 2,4 - Drain r V = 10V, V = 0.5 V , I = 0.5 I 3 - Source GS DS DSS D D25 t 46 ns d(off) R = 2 (External) G t 7 ns f Q 105 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 30 nC gs GS DS DSS D D25 Q 29 nC gd R 0.31 C/W thJC R 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 170 A S GS I Repetitive, pulse Width Limited by T 680 A SM JM V I = 100A, V = 0V, Note 1 1.4 V SD F GS t 86 ns rr I = 85A, -di/dt = 100A/ s F Q 250 nC RM V = 67.5V R I 6 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537