TM V = 1200V Polar IXTY1N120P DSS I = 1A Power MOSFET IXTA1N120P D25 R 20 DS(on) IXTP1N120P N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1200 V DSS J G V T = 25 C to 150 C, R = 1M 1200 V DGR J GS S V Continuous 30 V GSS D (Tab) V Transient 40 V GSM TO-220 (IXTP) I T = 25 C 1.0 A D25 C I T = 25 C, Pulse Width Limited by T 1.8 A DM C JM I T = 25 C 1.0 A A C G E T = 25 C 100 mJ AS C D S dv/dt I I , V V , T 150C 10 V/ns D (Tab) S DM DD DSS J G = Gate D = Drain P T = 25 C63W D C S = Source Tab = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages Low Q F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb G C Avalanche Rated M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Low Package Inductance Weight TO-252 0.35 g Fast Intrinsic Rectifier TO-263 2.50 g TO-220 3.00 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 250A 1200 V DSS GS D V V = V , I = 50A 2.5 4.5 V DC-DC Converters GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 30V, V = 0V 50 nA Power Supplies GSS GS DS AC and DC Motor Drives I V = V , V = 0V 5 A DSS DS DSS GS Discharge Circiuts in Lasers, Spark T = 125C 200 A J Igniters, RF Generators High Voltage Pulse Power R V = 10V, I = 0.5 I , Notes 1& 2 15.5 20.0 DS(on) GS D D25 Applications 2018 IXYS CORPORATION, All Rights Reserved DS99870D(6/18)IXTY1N120P IXTA1N120P IXTP1N120P Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 30V, I = 0.5 I , Note 1 0.55 0.90 S fs DS D D25 C 445 pF iss C V = 0V, V = 25V, f = 1MHz 25 pF oss GS DS C 5.4 pF rss Q 17.6 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 3.5 nC gs GS DS DSS D D25 Q 10.6 nC gd t 20 ns d(on) Resistive Switching Times t 28 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 54 ns d(off) R = 30 (External) G t 27 ns f R 2.0 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 1 A S GS I Repetitive, Pulse Width Limited by T 3 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS I = 1A, -di/dt = 100A/ s, V = 100V t 900 ns F R rr Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact DS(on) location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537