Preliminary Technical Information TM V = 800V Polar IXTU1N80P DSS I = 1A Power MOSFET IXTY1N80P D25 R 14 DS(on) IXTA1N80P TO-251 (IXTU) IXTP1N80P N-Channel Enhancement Mode G Avalanche Rated D S D (Tab) TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 800 V D (Tab) DSS J V T = 25 C to 150 C, R = 1M 800 V TO-263 (IXTA) DGR J GS V Continuous 30 V GSS G V Transient 40 V GSM S I T = 25 C1A D25 C D (Tab) I T = 25 C, Pulse Width Limited by T 2A DM C JM TO-220 (IXTP) I T = 25 C1A A C E T = 25 C75mJ AS C dv/dt I I , V V , T 150C 5 V/ns S DM DD DSS J G D D (Tab) S P T = 25 C42W D C T -55 ... +150 C J G = Gate D = Drain T 150 C JM S = Source Tab = Drain T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages F Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 N/lb C Low Q G M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Avalanche Rated Weight TO-251 0.40 g Low Package Inductance TO-252 0.35 g Fast Intrinsic Rectifier TO-263 2.50 g TO-220 3.00 g Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 250A 800 V DSS GS D Applications V V = V , I = 50A 2.0 4.0 V GS(th) DS GS D DC-DC Converters I V = 30V, V = 0V 100 nA Switch-Mode and Resonant-Mode GSS GS DS Power Supplies I V = V , V = 0V 3 A DSS DS DSS GS AC and DC Motor Drives T = 125C 30 A Discharge Circiuts in Lasers, Spark J Igniters, RF Generators R V = 10V, I = 0.5 I , Note 1 10 14 DS(on) GS D D25 High Voltage Pulse Power Applications 2017 IXYS CORPORATION, All Rights Reserved DS100112A(6/17)IXTU1N80P IXTY1N80P IXTA1N80P IXTP1N80P Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 0.30 0.55 S fs DS D D25 C 250 pF iss C V = 0V, V = 25V, f = 1MHz 22 pF oss GS DS C 5.3 pF rss Q 9.0 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 1.4 nC gs GS DS DSS D D25 Q 5.5 nC gd t 20 ns d(on) Resistive Switching Times t 18 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 58 ns d(off) R = 50 (External) G t 42 ns f R 3.0 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 1 A S GS I Repetitive, Pulse Width Limited by T 4 A SM JM V I = I , V = 0V, Note 1 1.3 V SD F S GS I = 1A, -di/dt = 100A/ s, V = 100V t 700 ns F R rr Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537