TM V = 1200V Polar IXTY1R4N120PHV DSS I = 1.4A Power MOSFET IXTY1R4N120P D25 R 13 DS(on) IXTA1R4N120P IXTP1R4N120P TO-252 N-Channel Enhancement Mode (IXTY..HV) G Avalanche Rated S D (Tab) TO-252 (IXTY) G Symbol Test Conditions Maximum Ratings S V T = 25 C to 150 C 1200 V DSS J D (Tab) V T = 25 C to 150 C, R = 1M 1200 V DGR J GS TO-263 V Continuous 30 V (IXTA) GSS V Transient 40 V G GSM S I T = 25 C 1.4 A D25 C D (Tab) I T = 25 C, Pulse Width Limited by T 3.0 A DM C JM TO-220 I T = 25 C 1.4 A (IXTP) A C E T = 25 C 150 mJ AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J G P T = 25 C86W D C D S D (Tab) T -55 ... +150 C J T 150 C JM G = Gate D = Drain T -55 ... +150 C S = Source Tab = Drain stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb C Low Q G M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Avalanche Rated Weight TO-252 / HV 0.35 g Low Package Inductance TO-263 2.50 g Fast Intrinsic Rectifier TO-220 3.00 g Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Space Savings J BV V = 0V, I = 250A 1200 V DSS GS D Applications V V = V , I = 100A 2.5 4.5 V GS(th) DS GS D DC-DC Converters Switch-Mode and Resonant-Mode I V = 30V, V = 0V 100 nA GSS GS DS Power Supplies AC and DC Motor Drives I V = V , V = 0V 5 A DSS DS DSS GS Discharge Circiuts in Lasers, Spark T = 125C 300 A J Igniters, RF Generators High Voltage Pulse Power R V = 10V, I = 0.5 I , Notes 1, 2 10.5 13.0 DS(on) GS D D25 Applications 2018 IXYS CORPORATION, All Rights Reserved DS99871E(6/18)IXTY1R4N120PHV IXTA1R4N120P IXTY1R4N120P IXTP1R4N120P Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 0.8 1.3 S fs DS D D25 C 666 pF iss C V = 0V, V = 25V, f = 1MHz 36 pF oss GS DS C 7.6 pF rss Q 24.8 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 4.4 nC gs GS DS DSS D D25 Q 12.8 nC gd t 25 ns d(on) Resistive Switching Times t 27 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 78 ns d(off) R = 25 (External) G t 29 ns f R 1.45 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 1.4 A S GS I Repetitive, Pulse Width Limited by T 4.2 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS I = 1.4A, -di/dt = 100A/ s, V = 100V t 900 ns F R rr Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact DS(on) location must be 5mm or less from the package body. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537