Preliminary Technical Information X-Class V = 650V IXTA20N65X DSS Power MOSFET I = 20A IXTP20N65X D25 R 210m DS(on) IXTH20N65X N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) V T = 25 C to 150 C 650 V DSS J V T = 25 C to 150 C, R = 1M 650 V DGR J GS V Continuous 30 V GSS V Transient 40 V G GSM D D (Tab) S I T = 25 C20A D25 C TO-247 (IXTH) I T = 25 C, Pulse Width Limited by T 40 A DM C JM dv/dt I I , V V , T 150C 30 V/ns S D25 DD DSS J P T = 25 C 320 W D C G T -55 ... +150 C J D D (Tab) S T 150 C JM T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C G = Gate D = Drain L S = Source Tab = Drain T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD F Mounting Force (TO-263) 10.65 / 2.2..14.6 N/lb C M Mounting Torque (TO-220 & TO-247) 1.13 / 10 Nm/lb.in d Features Weight TO-263 2.5 g TO-220 3.0 g TO-247 6.0 g International Standard Packages Low R and Q DS(ON) G Low Package Inductance Advantages Symbol Test Conditions Characteristic Values High Power Density (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Easy to Mount BV V = 0V, I = 250A 650 V Space Savings DSS GS D V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D Applications I V = 30V, V = 0V 100 nA GSS GS DS Switch-Mode and Resonant-Mode I V = V , V = 0V 5 A DSS DS DSS GS Power Supplies T = 125C 50 A J DC-DC Converters PFC Circuits R V = 10V, I = 0.5 I , Note 1 210 m DS(on) GS D D25 AC and DC Motor Drives Robotics and Servo Controls 2015 IXYS CORPORATION, All Rights Reserved DS100564E(6/15) IXTA20N65X IXTP20N65X IXTH20N65X Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 9 15 S fs DS D D25 R Gate Input Resistance 3.4 Gi C 1390 pF iss C V = 0V, V = 25V, f = 1MHz 1060 pF oss GS DS C 22 pF rss Effective Output Capacitance C 77 pF o(er) Energy related V = 0V GS C 232 pF V = 0.8 V o(tr) Time related DS DSS t 18 ns d(on) Resistive Switching Times t 30 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 46 ns d(off) R = 5 (External) G t 22 ns f Q 35 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 7 nC gs GS DS DSS D D25 Q 18 nC gd R 0.39 C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 20 A S GS I Repetitive, pulse Width Limited by T 80 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 350 ns rr I = 10A, -di/dt = 100A/ s F Q 4.45 C RM V = 100V R I 25 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537