X-Class V = 650V IXTP20N65XM DSS Power MOSFET I = 20A D25 R 210m DS(on) (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 650 V DSS J Isolated Tab D S V T = 25 C to 150 C, R = 1M 650 V DGR J GS V Continuous 30 V GSS G = Gate D = Drain V Transient 40 V S = Source GSM I T = 25 C, Limited by T 20 A D25 C JM I T = 25 C, Pulse Width Limited by T 40 A DM C JM dv/dt I I , V V , T 150C 30 V/ns S D25 DD DSS J Features P T = 25 C63W D C International Standard Package T -55 ... +150 C J Plastic Overmolded Tab T 150 C JM Low R and Q DS(ON) G T -55 ... +150 C Avalanche Rated stg 2500V~ Electrical Isolation T Maximum Lead Temperature for Soldering 300 C L Low Package Inductance T Plastic Body for 10s 260 C SOLD V 50/60 Hz, 1 Minute 2500 V~ ISOL Advantages M Mounting Torque 1.13 / 10 Nm/lb.in d Weight 2.5 g High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. Switch-Mode and Resonant-Mode J Power Supplies BV V = 0V, I = 250A 650 V DSS GS D DC-DC Converters PFC Circuits V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D AC and DC Motor Drives I V = 30V, V = 0V 100 nA Robotics and Servo Controls GSS GS DS I V = V , V = 0V 5 A DSS DS DSS GS T = 125C 50 A J R V = 10V, I = 10A, Note 1 210 m DS(on) GS D 2018 IXYS CORPORATION, All Rights Reserved DS100588F(11/18) IXTP20N65XM Symbol Test Conditions Characteristic Values OVERMOLDED TO-220 (T = 25C, Unless Otherwise Specified) Min. Typ. Max J (IXTP...M) oP g V = 10V, I = 10A, Note 1 9 15 S fs DS D R Gate Input Resistance 3.4 Gi C 1390 pF iss C V = 0V, V = 25V, f = 1MHz 1060 pF oss GS DS C 22 pF rss 1 2 3 Effective Output Capacitance C 77 pF V = 0V o(er) Energy related GS C 232 pV = 0.8 V F o(tr) DS DSS Time related t 18 ns d(on) Resistive Switching Times t 30 ns r V = 10V, V = 0.5 V , I = 10A GS DS DSS D t 46 ns Terminals: 1 - Gate d(off) R = 5 (External) 2 - Drain G t 22 ns 3 - Source f Q 35 nC g(on) Q V = 10V, V = 0.5 V , I = 10A 7 nC gs GS DS DSS D Q 18 nC gd R 2.0 C/W thJC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V, Note1 20 A S GS I Repetitive, pulse Width Limited by T 80 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 350 ns rr I = 10A, -di/dt = 100A/ s F Q 4.45 C RM V = 100V R I 25 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537