High Voltage V = 1000 V IXTA 2N100 DSS MOSFET I = 2 A IXTP 2N100 D25 R = 7 DS(on) N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) V T = 25C to 150C 1000 V DSS J V T = 25C to 150C R = 1 M 1000 V DGR J GS V Continuous 20 V GS D (TAB) G V Transient 30 V D GSM S I T = 25C2A D25 C I T = 25C, pulse width limited by T 8A DM C JM TO-263 AA (IXTA) P T = 25C 100 W D C T -55 ... +150 C J T 150 C JM G T -55 ... +150 C stg S D (TAB) M Mounting torque 1.13/10 Nm/lb.in. d Weight 4 g G = Gate, D = Drain, Maximum lead temperature for soldering 300 C S = Source, TAB = Drain 1.6 mm (0.062 in.) from case for 10 s Features International standard packages TM Low R HDMOS process DS (on) Symbol Test Conditions Characteristic Values Rugged polysilicon gate cell structure (T = 25C, unless otherwise specified) J Low package inductance (< 5 nH) min. typ. max. - easy to drive and to protect Fast switching times V V = 0 V, I = 250 A 1000 V DSS GS D V V = V , I = 250 A 2 4.5 V Applications GS(th) DS GS D Switch-mode and resonant-mode I V = 20 V , V = 0 100 nA GSS GS DC DS power supplies Flyback inverters I V = 0.8 V T = 25C 200 A DSS DS DSS J V = 0 V T = 125C1mA DC choppers GS J R V = 10 V, I = 0.5 I 7.0 Advantages DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % Space savings High power density IXYS reserves the right to change limits, test conditions, and dimensions. 97540A(5/98) 2000 IXYS All rights reserved 1 - 4IXTA2N100 IXTP2N100 Symbol Test Conditions Characteristic Values TO-220 AB Outline (T = 25C, unless otherwise specified) J min. typ. max. g V = 10 V I = 0.5 I , pulse test 1.5 2.2 S fs DS D D25 C 825 pF iss C V = 0 V, V = 25 V, f = 1 MHz 58 pF oss GS DS C 15 pF rss t 15 30 ns d(on) t V = 10 V, V = 0.5 V , I = 0.5 I 15 35 ns r GS DS DSS D D25 Pins: 1 - Gate 2 - Collector 3 - Emitter t R = 20 , (External) 60 80 ns d(off) G 4 - Collector Bottom Side t 30 55 ns f Dim. Millimeter Inches Min. Max. Min. Max. Q 40 nC g(on) A 12.70 13.97 0.500 0.550 B 14.73 16.00 0.580 0.630 Q V = 10 V, V = 0.5 V , I = 0.5 I 10 nC gs GS DS DSS D D25 C 9.91 10.66 0.390 0.420 Q 15 nC D 3.54 4.08 0.139 0.161 gd E 5.85 6.85 0.230 0.270 R 1.25 K/W F 2.54 3.18 0.100 0.125 thJC G 1.15 1.65 0.045 0.065 R 0.25 K/W thCK H 2.79 5.84 0.110 0.230 J 0.64 1.01 0.025 0.040 K 2.54 BSC 0.100 BSC M 4.32 4.82 0.170 0.190 N 1.14 1.39 0.045 0.055 Source-Drain Diode Characteristic Values Q 0.35 0.56 0.014 0.022 (T = 25C, unless otherwise specified) J R 2.29 2.79 0.090 0.110 Symbol Test Conditions min. typ. max. I V = 0 V 2 A TO-263 SMD Outline S GS I Repetitive pulse width limited by T 8A SM JM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = I , -di/dt = 100 A/ s, V = 100 V 1000 ns rr F S R 1. Gate 2. Collector 3. Emitter 4. Collector Botton Side Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015 R 0.46 0.74 .018 .029 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 2000 IXYS All rights reserved 2 - 4 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025