TM V = 1000V Polar IXTY2N100P DSS I = 2A Power MOSFET IXTA2N100P D25 R 7.5 DS(on) IXTP2N100P N-Channel Enhancement Mode Avalanche Rated TO-252 (IXTY) G S D (Tab) TO-263 (IXTA) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 1000 V DSS J G V T = 25 C to 150 C, R = 1M 1000 V DGR J GS S V Continuous 20 V GSS D (Tab) V Transient 30 V GSM TO-220 (IXTP) I T = 25 C2A D25 C I T = 25 C, Pulse Width Limited by T 5A DM C JM I T = 25 C2A A C G D D (Tab) E T = 25 C 150 mJ S AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J G = Gate D = Drain P T = 25 C86W D C S = Source Tab = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages Low Q F Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb G C Avalanche Rated M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Low Package Inductance Weight TO-252 0.35 g Fast Intrinsic Rectifier TO-263 2.50 g TO-220 3.00 g Advantages High Power Density Easy to Mount Symbol Test Conditions Characteristic Values Space Savings (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV V = 0V, I = 250A 1000 V DSS GS D V V = V , I = 100A 2.5 4.5 V DC-DC Converters GS(th) DS GS D Switch-Mode and Resonant-Mode I V = 20V, V = 0V 50 nA Power Supplies GSS GS DS AC and DC Motor Drives I V = V , V = 0V 5 A DSS DS DSS GS Lasers Drivers T = 125C 250 A J Robotics and Servo Controls R V = 10V, I = 0.5 I , Note 1 6.0 7.5 DS(on) GS D D25 2017 IXYS CORPORATION, All Rights Reserved DS99817C(8/17)IXTY2N100P IXTA2N100P IXTP2N100P Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 20V, I = 0.5 I , Note 1 1.00 1.7 S fs DS D D25 C 655 pF iss C V = 0V, V = 25V, f = 1MHz 44 pF oss GS DS C 9.2 pF rss Q 24.3 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 4.4 nC gs GS DS DSS D D25 Q 12.6 nC gd t 25 ns d(on) Resistive Switching Times t 29 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 80 ns d(off) R = 25 (External) G t 27 ns f R 1.45 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 2 A S GS I Repetitive, Pulse Width Limited by T 6 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS I = 2A, -di/dt = 100A/ s, V = 100V t 800 ns F R rr Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537