TM Trench V = 200V IXTA32N20T DSS Power MOSFET I = 32A IXTP32N20T D25 R 78m DS(on) N-Channel Enhancement Mode TO-263 AA (IXTA) Avalanche Rated Fast Intrinsic Rectifier G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) V T = 25C to 175C 200 V DSS J V T = 25C to 175C, R = 1M 200 V DGR J GS V Continuous 20 V GSS V Transient 30 V GSM G I T = 25C32 A D D (Tab) D25 C S I T = 25C, Pulse Width Limited by T 64 A DM C JM I T = 25C16 A A C G = Gate D = Drain S = Source Tab = Drain E T = 25C 250 mJ AS C dv/dt I I , V V , T 175C 10 V/ns S DM DD DSS J Features P T = 25C 200 W D C T - 55 ... +175 C z J International Standard Packages z T 175 C JM 175C Operating Temperature z T - 55 ... +175 C Avalanche Rated stg z Low R DS(on) T 1.6mm (0.062in.) from Case for 10s 300 C L z Fast Intrinsic Rectifier T Plastic Body for 10 Seconds 260 C sold z High Current Handling Capability M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in. d Weight TO-263 2.5 g TO-220 3.0 g Advantages z Easy to Mount z Symbol Test Conditions Characteristic Values Space Savings z (T = 25C Unless Otherwise Specified) Min. Typ. Max. High Power Density J BV V = 0V, I = 250A 200 V DSS GS D Applications V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D I V = 20V, V = 0V 100 nA z GSS GS DS DC-DC Converters z I V = V , V = 0V 3 A Battery Chargers DSS DS DSS GS z Switch-Mode and Resonant-Mode T = 150C 200 A J Power Supplies z R V = 10V, I = 0.5 I , Notes 1, 2 78 m DC Choppers DS(on) GS D D25 z AC Motor Drives z Uninterruptible Power Supplies z High Speed Power Switching Applications 2010 IXYS CORPORATION, All Rights Reserved DS99959B(10/10)IXTA32N20T IXTP32N20T Symbol Test Conditions Characteristic Values TO-263 Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 18 30 S fs DS D D25 C 1760 pF iss C V = 0V, V = 25V, f = 1MHz 212 pF oss GS DS C 31 pF rss t 14 ns d(on) Resistive Switching Times t 18 ns r V = 15V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 55 ns d(off) R = 10 (External) G t 31 ns f Q 38 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 12 nC gs GS DS DSS D D25 Q 13 nC gd R 0.75 C/W thJC R TO-220 0.50 C/W thCH Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 32 A S GS I Repetitive, Pulse Width Limited by T 128 A SM JM TO-220 Outline V I = I , V = 0V, Note 1 1.2 V F S GS SD t 110 ns rr I = 0.5 I , V = 0V F D25 GS I 6.90 A -di/dt = 100A/s RM V = 0.5 V Q R DSS 0.38 nC RM Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact location must be DS(on) Pins: 1 - Gate 2 - Drain 5mm or less from the package body. 3 - Source IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537