X-Class V = 650V IXTP32N65XM DSS Power MOSFET I = 32A D25 R 135m DS(on) (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings G V T = 25 C to 150 C 650 V Isolated Tab D DSS J S V T = 25 C to 150 C, R = 1M 650 V DGR J GS V Continuous 30 V G = Gate D = Drain GSS S = Source V Transient 40 V GSM I T = 25 C, Limited by T 32 A D25 C JM I T = 25 C, Pulse Width Limited by T 64 A DM C JM dv/dt I I , V V , T 150C 30 V/ns S D25 DD DSS J Features P T = 25 C78W D C T -55 ... +150 C J International Standard Package T 150 C JM Plastic Overmolded Tab T -55 ... +150 C Low R and Q stg DS(ON) G Avalanche Rated T Maximum Lead Temperature for Soldering 300 C L 2500V~ Electrical Isolation T Plastic Body for 10s 260 C SOLD Low Package Inductance V 50/60 Hz, 1 Minute 2500 V~ ISOL M Mounting Torque 1.13 / 10 Nm/lb.in d Advantages Weight 2.5 g High Power Density Easy to Mount Space Savings Symbol Test Conditions Characteristic Values Applications (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Switch-Mode and Resonant-Mode BV V = 0V, I = 250A 650 V DSS GS D Power Supplies DC-DC Converters V V = V , I = 250A 3.0 5.5 V GS(th) DS GS D PFC Circuits AC and DC Motor Drives I V = 30V, V = 0V 100 nA GSS GS DS Robotics and Servo Controls I V = V , V = 0V 5 A DSS DS DSS GS T = 125C 50 A J R V = 10V, I = 16A, Note 1 135 m DS(on) GS D 2018 IXYS CORPORATION, All Rights Reserved DS100589F(11/18) IXTP32N65XM Symbol Test Conditions Characteristic Values OVERMOLDED TO-220 (T = 25C, Unless Otherwise Specified) Min. Typ. Max J (IXTP...M) oP g V = 10V, I = 16A, Note 1 13 22 S fs DS D R Gate Input Resistance 2.6 Gi C 2205 pF iss C V = 0V, V = 25V, f = 1MHz 1600 pF oss GS DS C 30 pF rss 1 2 3 Effective Output Capacitance C 111 pF o(er) Energy related V = 0V GS C 349 pF V = 0.8 V o(tr) Time related DS DSS t 23 ns d(on) Resistive Switching Times t 49 ns r V = 10V, V = 0.5 V , I = 16A GS DS DSS D t 58 ns d(off) Terminals: 1 - Gate R = 5 (External) 2 - Drain G t 28 ns f 3 - Source Q 54 nC g(on) Q V = 10V, V = 0.5 V , I = 16A 12 nC gs GS DS DSS D Q 29 nC gd R 1.6 C/W thJC Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V, Note1 32 A S GS I Repetitive, pulse Width Limited by T 128 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 400 ns rr I = 16A, -di/dt = 100A/ s F Q 6.1 C RM V = 100V R I 31 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537