Preliminary Technical Information TM TrenchT4 V = 40V IXTP340N04T4 DSS I = 340A Power MOSFET IXTH340N04T4 D25 R 1.9m DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings G V T = 25 C to 175 C40 V D D (Tab) DSS J S V T = 25 C to 175 C, R = 1M 40 V DGR J GS TO-247 (IXTH) V Transient 15 V GSM I T = 25 C 340 A D25 C I Lead Current Limit, RMS 160 A LRMS I T = 25 C, Pulse Width Limited by T 700 A G DM C JM D D (Tab) S I T = 25 C 170 A A C E T = 25 C 1.2 J AS C G = Gate D = Drain S = Source Tab = Drain I T = 25 C 340 A A C E T = 25 C 500 mJ AS C P T = 25 C 480 W D C T -55 ... +175 C J T 175 C Features JM T -55 ... +175 C stg International Standard Packages T Maximum Lead Temperature for Soldering 300 C L 175C Operating Temperature T Plastic Body for 10s 260 C SOLD High Current Handling Capability Avalanche Rated M Mounting Torque 1.13 / 10 m/lb.in d Fast Intrinsic Rectifier Weight TO-220 3 g Low R DS(on) TO-247 6 g Advantages Symbol Test Conditions Characteristic Values (T = 25 C Unless Otherwise Specified) Min. Typ. Max. Easy to Mount J Space Savings BV V = 0V, I = 250 A 40 V DSS GS D High Power Density V V = V , I = 250 A 2.0 4.0 V GS(th) DS GS D I V = 15V, V = 0V 200 nA GSS GS DS Applications I V = V , V = 0V 5 A DSS DS DSS GS DC-DC Converters & Off-Line UPS T = 150C 750 A J Primary-Side Switch R V = 10V, I = 100A, Notes 1, 2 1.9 m DS(on) GS D High Current Switching Applications 2016 IXYS CORPORATION, All Rights Reserved DS100699B(03/16) IXTP340N04T4 IXTH340N04T4 Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 60A, Note 1 110 180 S fs DS D C 13 nF iss C V = 0V, V = 25V, f = 1MHz 1850 pF oss GS DS C 1226 pF rss R Gate Input Resistance 1.1 Gi t 23 ns d(on) Resistive Switching Times t 55 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 113 ns d(off) R = 3 (External) G t 40 ns f Q 256 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 64 nC gs GS DS DSS D D25 Q 86 nC gd R 0.31C/W thJC R TO-220 0.50 C/W thCS TO-247 0.21 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 340 A S GS I Repetitive, Pulse Width Limited by T 1360 A SM JM V I = 100A, V = 0V, Note 1 1.4 V F GS SD t I = 150A, V 43 ns = 0V, rr F GS -di/dt = 100A/ s, I 10 A RM V = 30V R Q 210 nC RM Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact location must be 5mm DS(on) or less from the package body. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537