TM V = 150V TrenchHV IXTA42N15T DSS I = 42A Power MOSFET IXTP42N15T D25 R 45m DS(on) N-Channel Enhancement Mode Avalanche Rated TO-263 Symbol Test Conditions Maximum Ratings G S V T = 25C to 175C 150 V DSS J (TAB) V T = 25C to 175C, R = 1M 150 V DGR J GS V Transient 30 V GSM TO-220 I T = 25C42 A D25 C I T = 25C, pulse width limited by T 100 A DM C JM I T = 25C5 A A C G E T = 25C 400 mJ D AS C S (TAB) P T = 25C 200 W D C T -55 ... +175 C J G = Gate D = Drain T 175 C JM S = Source TAB = Drain T -55 ... +175 C stg T 1.6mm (0.062in.) from case for 10s 300 C L T Plastic body for 10 seconds 260 C SOLD Features M Mounting torque (TO-220) 1.13 / 10 Nm/lb.in. d z Weight TO-263 2.5 g International standard packages TO-220 3.0 g z 175C Operating Temperature z Avalanche rated Advantages z Symbol Test Conditions Characteristic Values Easy to mount z (T = 25C unless otherwise specified) Min. Typ. Max. Space savings J z High power density BV V = 0V, I = 250A 150 V DSS GS D V V = V , I = 250A 2.5 4.5 V Applications GS(th) DS GS D I V = 20V, V = 0V 100 nA GSS GS DS z DC-DC converters z I V = V 5 A Battery chargers DSS DS DSS z Switched-mode and resonant-mode V = 0V T = 150C 150 A GS J power supplies R V = 10V, I = 0.5 I , Notes 1, 2 38 45 m z DS(on) GS D D25 DC choppers z AC motor drives z Uninterruptible power supplies z High speed power switching applications 2008 IXYS CORPORATION, All rights reserved DS99799A(11/08)IXTA42N15T IXTP42N15T Symbol Test Conditions Characteristic Values TO-263 (IXTA) Outline (T = 25C, unless otherwise specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 20 33 S fs DS D D25 C 1880 pF iss C V = 0V, V = 25V, f = 1MHz 255 pF oss GS DS C 37 pF rss t 14 ns d(on) Resistive Switching Times t 16 ns r V = 15V, V =0.5 V , I = 0.5 I GS DS DSS D D25 t 50 ns R = 10 (External) d(off) G t 25 ns f Q 21 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 6.0 nC gs GS DS DSS D D25 Q 6.6 nC gd R 0.75 C/W thJC R TO-220 0.50 C/W thCH Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) Min. Typ. Max. J I V = 0V 42 A S GS I Repetitive, Pulse width limited by T 126 A SM JM TO-220 (IXTP) Outline V I = 21A, V = 0V, Note 1 1.1 V F GS SD t 100 ns I = 25A, V = 0V, -di/dt = 100A/s, V = 50V rr F GS R Notes: 1. Pulse test, t 300s duty cycle, d 2%. 2. On through-hole packages, R Kelvin test contact DS(on) location must be 5mm or less from the package body. Pins: 1 - Gate 2 - Drain 3 - Source 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537