TM PolarP2 V = 500V IXTA460P2 DSS I = 24A Power MOSFET IXTP460P2 D25 R 270m DS(on) IXTQ460P2 N-Channel Enhancement Mode t = 400ns rr(typ) Avalanche Rated IXTH460P2 Fast Intrinsic Diode TO-220AB (IXTP) TO-263 AA (IXTA) TO-3P (IXTQ) G G S D G D S D (Tab) D (Tab) S D (Tab) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 500 V DSS J TO-247 (IXTH) V T = 25C to 150C, R = 1M 500 V DGR J GS V Continuous 30 V GSS V Transient 40 V GSM I T = 25C24A D25 C I T = 25C, Pulse Width Limited by T 50 A G DM C JM D D (Tab) S I T = 25C12A A C E T = 25C 750 mJ AS C G = Gate D = Drain dv/dt I I , V V ,T 150C 15 V/ns S DM DD DSS J S = Source Tab = Drain P T = 25C 480 W D C T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg Features T Maximum Lead Temperature for Soldering 300 C L z Avalanche Rated T Plastic Body for 10s 260 C SOLD z Fast Intrinsic Diode F Mounting Force TO-263 10..65 / 2.2..14.6 Nm/lb.in. z C Dynamic dv/dt Rated M Mounting Torque (TO-220, TO-3P & TO-247) 1.13 / 10 Nm/lb.in. z d Low Package Inductance Weight TO-263 2.5 g TO-220 3.0 g TO-3P 5.5 g Advantages TO-247 6.0 g z High Power Density z Easy to Mount z Space Savings Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 500 V Applications DSS GS D V V = V , I = 250A 2.5 4.5 V z GS(th) DS GS D Switch-Mode and Resonant-Mode Power Supplies I V = 30V, V = 0V 100 nA GSS GS DS z DC-DC Converters I V = V , V = 0V 25 A z DSS DS DSS GS Laser Drivers T = 125C 250 A z J AC and DC Motor Drives z R V = 10V, I = 0.5 I , Note 1 270 m Robotics and Servo Controls DS(on) GS D D25 2010 IXYS CORPORATION, All Rights Reserved DS100216B(06/10)IXTA460P2 IXTP460P2 IXTQ460P2 IXTH460P2 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 14 24 S fs DS D D25 C 2890 pF iss C V = 0V, V = 25V, f = 1MHz 280 pF oss GS DS C 22 pF rss t 15 ns d(on) Resistive Switching Times t 9 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 30 ns d(off) R = 10 (External) G t 5 ns f Q 48 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 13 nC gs GS DS DSS D D25 Q 16 nC gd R 0.26 C/W thJC R TO-220 0.50 C/W thCS R TO-3P & TO-247 0.25 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 24 A S GS I Repetitive, Pulse Width Limited by T 96 A SM JM V I = I , V = 0V, Note 1 1.3 V SD F S GS t 400 ns rr I = 12A, -di/dt = 100A/s F I 19.6 A RM V = 100V, V = 0V R GS Q 3.9 C RM Note 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537