TM Polar V = 200V IXTP50N20PM DSS Power MOSFET I = 50A D25 R 60m DS(on) (Electrically Isolated Tab) N-Channel Enhancement Mode OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings V T = 25 C to 175 C 200 V DSS J G Isolated Tab V T = 25 C to 175 C, R = 1M 200 V D DGR J GS S V Continuous 20 V GSS G = Gate D = Drain V Transient 30 V GSM S = Source I T = 25 C, Limited by T 50 A D25 C JM I T = 25 C, Pulse Width Limited by T 120 A DM C JM I T = 25 C50A A C E T = 25 C1J AS C Features dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25 C90W Plastic Overmolded Tab for Electrical D C Isolation T -55 ... +175 C J International Standard Package T 175 C JM Avalanche Rated T -55 ... +175 C Fast Intrinsic Diode stg Low Package Inductance T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD M Mounting Torque 1.13 / 10 Nm/lb.in Advantages d Weight 3 g High Power Density Easy to Mount Space Savings Applications Symbol Test Conditions Characteristic Values Switched-Mode and Resonant-Mode (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Power Supplies BV V = 0V, I = 250A 200 V DSS GS D DC-DC Converters AC and DC Motor Drives V V = V , I = 250A 2.5 5.0 V GS(th) DS GS D Robotics and Servo Controls I V = 20V, V = 0V 100 nA Battery Chargers GSS GS DS Uninterrupted Power Supplies I V = V , V = 0V 25 A DSS DS DSS GS High Speed Power Swicthing T = 150C 250 A J Applications R V = 10V, I = 25A, Note 1 60 m DS(on) GS D 2018 IXYS CORPORATION, All Rights Reserved DS99564H(5/18)IXTP50N20PM Symbol Test Conditions Characteristic Values OVERMOLDED TO-220 (T = 25C, Unless Otherwise Specified) Min. Typ. Max J (IXTP...M) g V = 10V, I = 25A, Note 1 12 23 S fs DS D C 2720 pF iss C V = 0V, V = 25V, f = 1MHz 490 pF oss GS DS C 105 pF rss t 26 ns 1 2 3 d(on) Resistive Switching Times t 35 ns r V = 10V, V = 0.5 V , I = 25A GS DS DSS D t 70 ns d(off) R =10 (External) G t 30 ns f Q 70 nC g(on) Q V = 10V, V = 0.5 V , I = 25A 17 nC gs GS DS DSS D Q 37 nC gd R 1.66 C/W thJC R 0.50 C/W thCS Terminals: 1 - Gate 2 - Drain 3 - Source Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 50 A S GS I Repetitive, Pulse Width Limited by T 200 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS I = 25A, -di/dt = 100A/ s t 150 ns F rr Q V = 100V 2 C RM R Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537