TM PolarP V = - 100V IXTA52P10P DSS I = - 52A Power MOSFETs IXTP52P10P D25 R 50m DS(on) IXTQ52P10P P-Channel Enhancement Mode Avalanche Rated IXTH52P10P TO-3P (IXTQ) TO-263 AA (IXTA) TO-220AB (IXTP) D G G G S D S G S D (Tab) D D (Tab) S Tab Symbol Test Conditions Maximum Ratings TO-247 (IXTH) V T = 25C to 150C -100 V DSS J V T = 25C to 150C, R = 1M -100 V DGR J GS V Continuous 20 V GSS G V Transient 30 V GSM D D (Tab) S I T = 25C - 52 A D25 C I T = 25C, Pulse Width Limited by T -130 A DM C JM G = Gate D = Drain S = Source Tab = Drain I T = 25C - 52 A A C E T = 25C 1.5 J AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J P T = 25C 300 W Features D C T -55 ... +150 C J z International Standard Packages T 150 C JM z Fast Intrinsic Diode T -55 ... +150 C stg z Dynamic dv/dt Rated T 1.6mm (0.062 in.) from Case for 10s 300 C z L Avalanche Rated T Plastic body for 10s 260 C z TM SOLD Rugged PolarP Process z Low Q and R M Mounting Torque (TO-3P,TO-220,TO-247) 1.13/10 Nm/lb.in. G ds(on) d z Low Drain-to-Tab Capacitance Weight TO-263 2.5 g z Low Package Inductance TO-220 3.0 g TO-3P 5.5 g TO-247 6.0 g Advantages z Easy to Mount Symbol Test Conditions Characteristic Values z (T = 25C, Unless Otherwise Specified) Min. Typ. Max. Space Savings J z High Power Density BV V = 0V, I = - 250A -100 V DSS GS D V V = V , I = - 250A - 2.0 - 4.0 V GS(th) DS GS D Applications I V = 20V, V = 0V 100 nA GSS GS DS z High-Side Switching I V = V , V = 0V -10 A DSS DS DSS GS z Push-Pull Amplifiers T = 125C -150 A J z DC Choppers R V = -10V, I = 0.5 I , Note 1 50 m z DS(on) GS D D25 Current Regulators z Automatic Test Equipment 2013 IXYS CORPORATION, All Rights Reserved DS99912C(01/13)IXTA52P10P IXTQ52P10P IXTP52P10P IXTH52P10P Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = -10V, I = 0.5 I , Note 1 12 20 S fs DS D D25 C 2845 pF iss C V = 0V, V = - 25V, f = 1MHz 1015 pF oss GS DS C 275 pF rss t 22 ns d(on) Resistive Switching Times t 29 ns r = -10V, V = 0.5 V , I = 0.5 I V GS DS DSS D D25 t 38 ns d(off) R = 3.3 (External) G t 22 ns f Q 60 nC g(on) Q V = -10V, V = 0.5 V , I = 0.5 I 17 nC gs GS DS DSS D D25 Q 23 nC gd R 0.42 C/W thJC R (TO-3P)(TO-247) 0.21 C/W thCS (TO-220) 0.50 C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V - 52 A S GS I Repetitive, Pulse Width Limited by T - 200 A SM JM V I = - 26A, V = 0V, Note 1 - 3.5 V SD F GS t 120 ns rr I = - 26A, -di/dt = -100A/s F Q 0.53 C RM V = - 50V, V = 0V R GS I - 8.9 A RM Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537