TM V = 500V Polar IXTU5N50P DSS I = 5A Power MOSFET IXTY5N50P D25 R 1.4 DS(on) IXTA5N50P TO-251 (IXTU) IXTP5N50P N-Channel Enhancement Mode G Avalanche Rated D S D (Tab) TO-252 (IXTY) G S Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 500 V D (Tab) DSS J V T = 25 C to 150 C, R = 1M 500 V TO-263 (IXTA) DGR J GS V Continuous 30 V GSS G V Transient 40 V GSM S I T = 25 C5A D25 C D (Tab) I T = 25 C, Pulse Width Limited by T 10 A DM C JM TO-220 (IXTP) I T = 25 C5A A C E T = 25 C 250 mJ AS C dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J G D D (Tab) S P T = 25 C90W D C T -55 ... +150 C J G = Gate D = Drain T 150 C JM S = Source Tab = Drain T -55 ... +150 C stg T Maximum Lead Temperature for Soldering 300 C L Features T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD International Standard Packages F Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 N/lb C Low Q G M Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in d Avalanche Rated Weight TO-251 0.40 g Low Package Inductance TO-252 0.35 g Fast Intrinsic Rectifier TO-263 2.50 g TO-220 3.00 g Advantages High Power Density Symbol Test Conditions Characteristic Values Easy to Mount (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Space Savings BV V = 0V, I = 250A 500 V DSS GS D Applications V V = V , I = 50A 3.0 5.5 V GS(th) DS GS D DC-DC Converters I V = 30V, V = 0V 100 nA Switch-Mode and Resonant-Mode GSS GS DS Power Supplies I V = V , V = 0V 5 A DSS DS DSS GS AC and DC Motor Drives T = 125C 25 A Discharge Circiuts in Lasers, Spark J Igniters, RF Generators R V = 10V, I = 0.5 I , Note 1 1.4 DS(on) GS D D25 High Voltage Pulse Power Applications 2017 IXYS CORPORATION, All Rights Reserved DS99446G(6/17)IXTU5N50P IXTY5N50P IXTA5N50P IXTP5N50P Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J g V = 10V, I = 0.5 I , Note 1 3.0 4.7 S fs DS D D25 C 620 pF iss C V = 0V, V = 25V, f = 1MHz 72 pF oss GS DS C 6.3 pF rss Q 12.6 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 4.3 nC gs GS DS DSS D D25 Q 5.0 nC gd t 22 ns d(on) Resistive Switching Times t 26 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 65 ns d(off) R = 30 (External) G t 24 ns f R 1.4 C/W thJC R TO-220 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 5 A S GS I Repetitive, Pulse Width Limited by T 15 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS I = 5A, -di/dt = 100A/ s, V = 100V t 400 ns F R rr Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537