TM V = 600 V IXTA 7N60P PolarHV DSS I = 7 A IXTP 7N60P D25 Power MOSFET R 1.1 DS(on) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-220 (IXTP) V T = 25 C to 175 C 600 V DSS J V T = 25 C to 175 C R = 1 M 600 V DGR J GS V Continuous 30 V GS (TAB) G V Transient 40 V D GSM S I T = 25C7A D25 C TO-263 (IXTA) I T = 25 C, pulse width limited by T 14 A DM C JM I T = 25C7A AR C E T = 25C20mJ AR C E T = 25 C 400 mJ AS C G S (TAB) dv/dt I I , di/dt 100 A/s, V V , 10 V/ns S DM DD DSS T 150 C, R = 18 J G G = Gate D = Drain P T = 25 C 150 W D C S = Source TAB = Drain T -55 ... +150 C J T 150 C JM T -55 ... +150 C Features stg T 1.6 mm (0.062 in.) from case for 10 s 300 C l L International standard packages T Plastic body for 10 s 260 C SOLD l Unclamped Inductive Switching (UIS) rated M Mounting torque (TO-220) 1.13/10 Nm/lb.in. d l Low package inductance Weight TO-220 4 g - easy to drive and to protect TO-263 3 g Advantages Symbol Test Conditions Characteristic Values l (T = 25 C, unless otherwise specified) Min. Typ. Max. J Easy to mount l Space savings BV V = 0 V, I = 250 A 600 V DSS GS D l High power density V V = V , I = 100A 3.0 5.5 V GS(th) DS GS D I V = 30 V , V = 0 100 nA GSS GS DC DS I V = V 5 A DSS DS DSS V = 0 V T = 125C50 A GS J R V = 10 V, I = 0.5 I 1.1 DS(on) GS D D25 Pulse test, t 300 s, duty cycle d 2 % DS99320E(03/06) 2006 IXYS All rights reserved OBSOLETEIXTA 7N60P IXTP 7N60P Symbol Test Conditions Characteristic Values TO-220 (IXTP) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 10 V I = 0.5 I , pulse test 4 7 S fs DS D D25 C 1080 pF iss C V = 0 V, V = 25 V, f = 1 MHz 110 pF oss GS DS C 11 pF rss t 20 ns d(on) t V = 10 V, V = 0.5 V , I = I 27 ns r GS DS DSS D D25 t R = 18 (External) 65 ns d(off) G t 26 ns f Pins: 1 - Gate 2 - Drain Q 20 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 7nC gs GS DS DSS D D25 Q 7nC gd R 0.83 C/W thJC R (TO-220) 0.25 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 7 A S GS TO-263 (IXTA) Outline I Repetitive 14 A SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 7 A, V = 0 V 500 ns rr F GS -di/dt = 100 A/s, V = 100 V R Dim. Millimeter Inches Min. Max. Min. Max. A 4.06 4.83 .160 .190 A1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 D 8.64 9.65 .340 .380 D1 7.11 8.13 .280 .320 E 9.65 10.29 .380 .405 E1 6.86 8.13 .270 .320 e 2.54 BSC .100 BSC L 14.61 15.88 .575 .625 L1 2.29 2.79 .090 .110 L2 1.02 1.40 .040 .055 L3 1.27 1.78 .050 .070 L4 0 0.38 0 .015 R 0.46 0.74 .018 .029 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 OBSOLETE