X2-Class V = 650V IXTP8N65X2M DSS Power MOSFET I = 8A D25 R 550m DS(on) (Electrically Isolated Tab) OVERMOLDED N-Channel Enhancement Mode TO-220 Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 650 V G DSS J Isolated Tab D S V T = 25 C to 150 C, R = 1M 650 V DGR J GS V Continuous 30 V GSS G = Gate D = Drain V Transient 40 V S = Source GSM I T = 25 C, Limited by T 8A D25 C JM I T = 25 C, Pulse Width Limited by T 16 A DM C JM I T = 25 C4A A C E T = 25 C 250 mJ AS C dv/dt I I , V V , T 150C 15 V/ns Features S DM DD DSS J P T = 25 C32W D C International Standard Package T -55 ... +150 C J Plastic Overmolded Tab T 150 C Low R and Q JM DS(ON) G Avalanche Rated T -55 ... +150 C stg 2500V~ Electrical Isolation T Maximum Lead Temperature for Soldering 300 C L Low Package Inductance T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD V 50/60 Hz, 1 Minute 2500 V~ ISOL Advantages M Mounting Torque 1.13 / 10 Nm/lb.in d High Power Density Weight 2.5 g Easy to Mount Space Savings Applications Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J Switch-Mode and Resonant-Mode Power Supplies BV V = 0V, I = 250A 650 V DSS GS D DC-DC Converters V V = V , I = 250A 3.0 5.0 V PFC Circuits GS(th) DS GS D AC and DC Motor Drives I V = 30V, V = 0V 100 nA GSS GS DS Robotics and Servo Controls I V = V , V = 0V 10 A DSS DS DSS GS T = 125C 150 A J R V = 10V, I = 4A, Note 1 550 m DS(on) GS D 2018 IXYS CORPORATION, All Rights Reserved DS100668C(10/18)IXTP8N65X2M Symbol Test Conditions Characteristic Values OVERMOLDED TO-220 (T = 25C, Unless Otherwise Specified) Min. Typ. Max J (IXTP...M) oP g V = 10V, I = 4A, Note 1 4.8 8.0 S fs DS D R Gate Input Resistance 6 Gi C 800 pF iss C V = 0V, V = 25V, f = 1MHz 495 pF oss GS DS C 2.2 pF rss 1 2 3 Effective Output Capacitance C 43 pF o(er) Energy related V = 0V GS C 129 pF V = 0.8 V o(tr) Time related DS DSS t 24 ns d(on) Resistive Switching Times t 28 ns r V = 10V, V = 0.5 V , I = 4A GS DS DSS D t 53 ns d(off) Terminals: 1 - Gate R = 30 (External) G 2 - Drain t 24 ns f 3 - Source Q 12.0 nC g(on) Q V = 10V, V = 0.5 V , I = 4A 3.1 nC gs GS DS DSS D Q 4.4 nC gd R 3.90 C/W thJC R 0.50 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max J I V = 0V 8 A S GS I Repetitive, pulse Width Limited by T 32 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS t 200 ns rr I = 4A, -di/dt = 100A/ s F Q 1.65 C RM V = 100V R I 16.3 A RM Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537