X-On Electronics has gained recognition as a prominent supplier of IXTQ18N60P MOSFETs across the USA, India, Europe, Australia, and various other global locations. IXTQ18N60P MOSFETs are a product manufactured by IXYS. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IXTQ18N60P IXYS

Name: IXTQ18N60P
Brand: IXYS
SKU: IXTQ18N60P_IXYS
Availability: OutOfStock
Rating: 5 (11 reviews)

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Part No.	IXTQ18N60P
Manufacturer:	IXYS
Category:	MOSFETs
Description:	MOSFET 18.0 Amps 600 V 0.42 Ohm Rds
Datasheet:	IXTQ18N60P Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 6.7846 ea
Line Total: USD 6.78

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

IXTQ18N60P More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Wed. 04 Dec to Fri. 06 Dec MOQ : 1 Multiples : 1	1 : USD 6.7846 3 : USD 6.1061 4 : USD 4.6271 10 : USD 4.3693

We are delighted to provide the IXTQ18N60P from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IXTQ18N60P and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The IXTQ18N60P is a metal-oxide-semiconductor field-effect transistor (MOSFET) manufactured by IXYS. It has a maximum drain current rating of 18.0 Amps and a maximum drain-source voltage rating of 600 volts. The device has a maximum drain-source on-state resistance (Rds) of 0.42 ohms. The IXTQ18N60P is a high power, medium voltage device with excellent switching characteristics. It is suitable for use in power switch circuits, motor control and power conversion applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CLR may also be referenced as

IXS
IXYS
IXYS CORP
Ixys Corporation
IXYS INTEG.CIRCUITS DIV(CLARE)
IXYS Integrated Circuits
IXYS Integrated Circuits / Clare
IXYS Integrated Circuits Division
IXYS Integrated Circuits/Clare
IXYS RF
IXYS SEMICONDUCTOR
Littelfuse/IXYS

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Manufacturer IXYS IXYS
Product Category MOSFETs MOSFETs
RoHS - XON Y Y
Id - Continuous Drain Current 18 A 18 A
Vds - Drain-Source Breakdown Voltage 600 V 600 V
Rds On - Drain-Source Resistance 420 mOhms 420 mOhms
Transistor Polarity N - Channel N - Channel
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 360 W 360 W
Mounting Style Through Hole Through Hole
Package / Case TO - 3P - 3 TO - 3P - 3
Packaging Tube Tube
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 30 V 30 V
Channel Mode Enhancement Enhancement
Configuration Single Single
Height 20.3 mm 20.3 mm
Length 15.8 mm 15.8 mm
Series Ixtq18n60 Ixtq18n60
Transistor Type 1 N - Channel 1 N - Channel
Width 4.9 mm 4.9 mm
Brand Ixys Ixys
Forward Transconductance - Min 16 S 16 S
Fall Time 22 ns 22 ns
Product Type Mosfet Mosfet
Rise Time 22 ns 22 ns
Factory Pack Quantity : 30 30
Subcategory Mosfets Mosfets
Typical Turn-Off Delay Time 62 ns 62 ns
Typical Turn-On Delay Time 21 ns 21 ns