TM IXTQ 22N60P V = 600 V PolarHV DSS IXTV 22N60P I =22 A D25 Power MOSFET IXTV 22N60PS R 350 m DS (on) N-Channel Enhancement Mode Avalanche Rated TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 600 V DSS J V T = 25 C to 150 C R = 1 M 600 V DGR J GS V Continuous 30 V G GS D (TAB) S V Tranisent 40 V GSM I T = 25C22A D25 C I T = 25 C, pulse width limited by T 66 A DM C JM PLUS220 (IXTV) I T = 25C22A AR C E T = 25C40mJ AR C E T = 25 C 1.0 J AS C G dv/dt I I , di/dt 100 A/s, V V , 10 V/ns D D (TAB) S DM DD DSS S T 150C, R = 4 J G P T = 25 C 400 W D C PLUS220SMD (IXTV S) T -55 ... +150 C J T 150 C JM T -55 ... +150 C stg T 1.6 mm (0.062 in.) from case for 10 s 300 C L T Plastic body for 10 s 260 C SOLD G M Mounting torque (TO-3P) 1.13/10 Nm/lb.in. d D (TAB) S F Mounting force (PLUS 220) 11...65/2.5...15 N/lb C Weight TO-3P 6 g G = Gate D = Drain PLUS220 & PLUS220SMD 5.0 g S = Source TAB = Drain Features Symbol Test Conditions Characteristic Values l (T = 25 C, unless otherwise specified) Min. Typ. Max. International standard packages J l Unclamped Inductive Switching (UIS) BV V = 0 V, I = 250 A 600 V DSS GS D rated l V V = V , I = 250A 3.0 5.5 V Low package inductance GS(th) DS GS D - easy to drive and to protect I V = 30 V , V = 0 100 nA GSS GS DC DS I V = V 25 A DSS DS DSS Advantages V = 0 V T = 125 C 250 A GS J l Easy to mount R V = 10 V, I = 0.5 I 350 m DS(on) GS D D25 l Space savings Pulse test, t 300 s, duty cycle d 2 % l High power density DS99250E(12/05) 2005 IXYS All rights reservedIXTQ 22N60P IXTV 22N60P IXTV 22N60PS Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25 C, unless otherwise specified) J Min. Typ. Max. g V = 20 V I = 0.5 I , pulse test 15 21 S fs DS D D25 C 3600 pF iss C V = 0 V, V = 25 V, f = 1 MHz 305 pF oss GS DS C 38 pF rss t 20 ns d(on) t V = 10 V, V = 0.5 V , I = I 20 ns r GS DS DSS D D25 t R = 4 (External) 60 ns d(off) G t 23 ns f Q 62 nC g(on) Q V = 10 V, V = 0.5 V , I = 0.5 I 20 nC gs GS DS DSS D D25 Q 25 nC gd R 0.31 C/W thJC R (TO-3P) 0.21 C/W thCS Source-Drain Diode Characteristic Values (T = 25 C, unless otherwise specified) J Symbol Test Conditions Min. Typ. Max. I V = 0 V 22 A S GS I Repetitive 66 A PLUS220 (IXTV) Outline SM V I = I , V = 0 V, 1.5 V SD F S GS Pulse test, t 300 s, duty cycle d 2 % t I = 22A, -di/dt = 100 A/s 500 ns rr F Q V = 100V, V = 0 V 4.0 C RM R GS PLUS220SMD (IXTV S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2