TM LinearL2 V = 500V IXTH30N50L2 DSS Power MOSFET I = 30A IXTQ30N50L2 D25 R 215m w/ Extended FBSOA DS(on) IXTT30N50L2 D DD O DD O TO-268 (IXTT) N-Channel Enhancement Mode R Gi ww G G O S O S D (Tab) TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings V T = 25 C to 150 C 500 V DSS J V T = 25 C to 150 C, R = 1M 500 V DGR J GS G D V Continuous 20 V GSS S V Transient 30 V GSM D (Tab) I T = 25 C 30 A D25 C I T = 25 C, Pulse Width Limited by T 60 A TO-247 (IXTH) DM C JM I T = 25 C30 A A C E T = 25 C 1.5 J AS C P T = 25 C 400 W D C G D T -55 ... +150 C D (Tab) J S T 150 C JM T -55 ... +150 C stg G = Gate D = Drain S = Source Tab = Drain T Maximum Lead Temperature for Soldering 300 C L T Plastic Body for 10s 260 C SOLD M Mounting Torque (TO-247&TO-3P) 1.13 / 10 Nm/lb.in d Features Weight TO-268 4.0 g TO-3P 5.5 g Designed for Linear Operation TO-247 6.0 g International Standard Packages Avalanche Rated Guaranteed FBSOA at 75 C Symbol Test Conditions Characteristic Values Advantages (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J BV V = 0V, I = 250A 500 V Easy to Mount DSS GS D Space Savings V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D High Power Density I V = 20V, V = 0V 100 nA GSS GS DS Applications I V = V , V = 0V 50 A DSS DS DSS GS T = 125C 300 A J Solid State Circuit Breakers R V = 10V, I = 0.5 I , Note 1 215 m Soft Start Controls DS(on) GS D D25 Linear Amplifiers Programmable Loads Current Regulators 2014 IXYS CORPORATION, All Rights Reserved DS99957B (02/14)IXTH30N50L2 IXTQ30N50L2 IXTT30N50L2 Symbol Test Conditions Characteristic Values TO-3P Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 9 12 15 S fs DS D D25 C 8100 pF iss C V = 0V, V = 25V, f = 1MHz 530 pF oss GS DS C 115 pF rss R Integrated Gate Input Resistor 3.5 Gi t 35 ns d(on) Resistive Switching Times t 117 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 94 ns d(off) R = 0 (External) G t 40 ns f Q 240 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 58 nC gs GS DS DSS D D25 Q 135 nC gd R 0.31 C/W thJC R (TO-247&TO-3P) 0.25 C/W thCS Safe Operating Area Specification Characteristic Values Symbol Test Conditions Min. Typ. Max. SOA V = 400V, I = 0.5A, T = 75C, Tp = 2s 200 W DS D C Source-Drain Diode TO-247 Outline Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 30 A S GS I Repetitive, Pulse Width Limited by T 120 A P SM JM 1 2 3 V I = I , V = 0V, Note 1 1.5 V SD F S GS t I = I 500, -di/dt = 100A/ s, ns rr F S V = 100V, V = 0V R GS e Note 1: Pulse test, t 300 s, duty cycle, d 2%. Terminals: 1 - Gate 2 - Drain 3 - Source TO-268 Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 Terminals: 1 - Gate 2,4 - Drain 3 - Source P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537