TM Polar V = 500V IXTQ44N50P DSS I = 44A Power MOSFET D25 R 140m DS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-3P G D Symbol Test Conditions Maximum Ratings S V T = 25 C to 150 C 500 V D (Tab) DSS J V T = 25 C to 150 C, R = 1M 500 V DGR J GS G = Gate D = Drain V Continuous 30 V GSS S = Source Tab = Drain V Transient 40 V GSM I T = 25 C 44 A D25 C I T = 25 C, Pulse Width Limited by T 110 A DM C JM I T = 25 C44 A A C Features E T = 25 C 1.7 J AS C Fast Intrinsic Rectifier dv/dt I I , V V , T 150C 10 V/ns S DM DD DSS J Avalanche Rated P T = 25 C 658 W Low R and Q D C DS(ON) G Low Package Inductance T -55 ... +150 C J T 150 C JM T -55 ... +150 C Advantages stg T Maximum Lead Temperature for Soldering 300 C L High Power Density T Plastic Body for 10s 260 C SOLD Easy to Mount M Mounting Torque 1.13/10 Nm/lb.in d Space Savings Weight 5.5 g Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Symbol Test Conditions Characteristic Values Laser Drivers (T = 25 C Unless Otherwise Specified) Min. Typ. Max. J AC and DC Motor Drives BV V = 0V, I = 250A 500 V DSS GS D Robotics and Servo Controls V V = V , I = 250A 3.0 5.0 V GS(th) DS GS D I V = 30V, V = 0V 100 nA GSS GS DS I V = V , V = 0V 25 A DSS DS DSS GS T = 125C 500 A J R V = 10V, I = 0.5 I , Note 1 140 m DS(on) GS D D25 2014 IXYS CORPORATION, All Rights Reserved DS99372F(04/14)IXTQ44N50P Symbol Test Conditions Characteristic Values TO-3P Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 20 32 S fs DS D D25 C 5440 pF iss C V = 0V, V = 25V, f = 1MHz 639 pF oss GS DS C 40 pF rss t 28 ns d(on) Resistive Switching Times t 29 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 85 ns d(off) R = 3 (External) G t 27 ns f Q 98 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 35 nC gs GS DS DSS D D25 Q 30 nC gd R 0.19 C/W thJC R 0.25C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 44 A S GS I Repetitive, Pulse Width Limited by T 110 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t I = 22A, -di/dt = 100A/ 400 nss F rr V = 100V, V = 0V R GS Note 1. Pulse test, t 300 s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537