Advance Technical Information TM PolarP2 V = 500V IXTQ470P2 DSS I = 42A Power MOSFET D25 R 145m DS(on) t = 400ns N-Channel Enhancement Mode rr(typ) Avalanche Rated Fast Intrinsic Diode TO-3P Symbol Test Conditions Maximum Ratings V T = 25C to 150C 500 V DSS J V T = 25C to 150C, R = 1M 500 V DGR J GS G D V Continuous 30 V GSS S Tab V Transient 40 V GSM I T = 25C42A D25 C G = Gate D = Drain I T = 25C, Pulse Width Limited by T 126 A DM C JM S = Source Tab = Drain I T = 25C42A A C E T = 25C 1.3 J AS C dv/dt I I , V V ,T 150C 10 V/ns S DM DD DSS J P T = 25C 830 W D C Features T -55 ... +150 C J z T 150 C Avalanche Rated JM z T -55 ... +150 C Fast Intrinsic Diode stg z Dynamic dv/dt Rated T Maximum Lead Temperature for Soldering 300 C L z Low Package Inductance T Plastic Body for 10s 260 C SOLD M Mounting Torque 1.13/10 Nm/lb.in. d Advantages Weight 5.5 g z High Power Density z Easy to Mount z Space Savings Applications Symbol Test Conditions Characteristic Values z Switch-Mode and Resonant-Mode (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Power Supplies z BV V = 0V, I = 250A 500 V DC-DC Converters DSS GS D z Laser Drivers V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D z AC and DC Motor Drives z I V = 30V, V = 0V 100 nA Robotics and Servo Controls GSS GS DS I V = V , V = 0V 5 A DSS DS DSS GS T = 125C 50 A J R V = 10V, I = 0.5 I , Note 1 145 m DS(on) GS D D25 2010 IXYS CORPORATION, All Rights Reserved DS100248(03/10)IXTQ470P2 Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g V = 20V, I = 0.5 I , Note 1 23 36 S fs DS D D25 C 5400 pF iss C V = 0V, V = 25V, f = 1MHz 545 pF oss GS DS C 44 pF rss t 23 ns d(on) Resistive Switching Times t 12 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 42 ns d(off) R = 3 (External) G t 9 ns f Q 88 nC g(on) Pins: 1 - Gate 2 - Drain Q V = 10V, V = 0.5 V , I = 0.5 I 30 nC 3 - Source 4 - Drain gs GS DS DSS D D25 Q 31 nC gd R 0.15 C/W thJC R 0.25 C/W thCS Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J I V = 0V 42 A S GS I Repetitive, Pulse Width Limited by T 168 A SM JM V I = I , V = 0V, Note 1 1.5 V SD F S GS t 400 ns I = 21A, -di/dt = 100A/s rr F V = 100V, V = 0V R GS Note 1. Pulse test, t 300s, duty cycle, d 2%. ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537