Advance Technical Information TM Linear L2 Power V = 200V IXTT60N20L2 DSS MOSFET w/ Extended I = 60A IXTQ60N20L2 D25 R 45m FBSOA DS(on) IXTH60N20L2 TO-268 (IXTT) N-Channel Enhancement Mode Avalanche Rated G S Tab Symbol Test Conditions Maximum Ratings V T = 25C to 150C 200 V TO-3P (IXTQ) DSS J V T = 25C to 150C, R = 1M 200 V DGR J GS V Continuous 20 V GSS G V Transient 30 V GSM D S I T = 25C 60 A D25 C Tab I T = 25C, Pulse Width Limited by T 150 A DM C JM TO-247(IXTH) I T = 25C 60 A A C E T = 25C 2 J AS C P T = 25C 540 W D C T -55 to +150 C J T +150 C G JM D Tab T -55 to +150 C S stg T 1.6mm (0.063in) from Case for 10s 300 C L G = Gate D = Drain T Plastic Body for 10s 260 C SOLD S = Source Tab = Drain M Mounting Torque (TO-247&TO-3P) 1.13/10 Nm/lb.in. d Weight TO-268 4.0 g TO-3P 5.5 g Features TO-247 6.0 g z Designed for Linear Operation z International Standard Packages z Avalanche Rated z Guaranteed FBSOA at 75C Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Advantages BV V = 0V, I = 1mA 200 V DSS GS D z Easy to Mount V V = V , I = 250A 2.5 4.5 V GS(th) DS GS D z Space Savings z I V = 20V, V = 0V 100 nA High Power Density GSS GS DS I V = V , V = 0V 5 A DSS DS DSS GS Applications T = 125C 50 A J R V = 10V, I = 0.5 I , Note 1 45 m z DS(on) GS D D25 Solid State Circuit Breakers z Soft Start Controls z Linear Amplifiers z Programmable Loads z Current Regulators 2009 IXYS CORPORATION, All Rights Reserved DS100203(10/09)IXTT60N20L2 IXTQ60N20L2 IXTH60N20L2 Symbol Test Conditions Characteristic Values TO-3P (IXTQ) Outline (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J g V = 10V, I = 0.5 I , Note 1 35 44 53 S fs DS D D25 C 10.5 nF iss C V = 0V, V = 25V, f = 1MHz 1080 pF oss GS DS C 255 pF rss t 26 ns d(on) Resistive Switching Times t 23 ns r V = 10V, V = 0.5 V , I = 0.5 I GS DS DSS D D25 t 90 ns d(off) R = 1 (External) G t 18 ns f Q 255 nC g(on) Q V = 10V, V = 0.5 V , I = 0.5 I 48 nC gs GS DS DSS D D25 Q 90 nC gd R 0.23 C/W thJC R (TO-247&TO-3P) 0.25 C/W thCS Safe Operating Area Specification Symbol Test Conditions Min. Typ. Max. SOA V = 160V, I = 1.88A, T = 75C, tp = 3s 300 W DS D C Source-Drain Diode Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J TO-247 (IXTH) Outline I V = 0V 60 A S GS I Repetitive, Pulse Width Limited by T 240 A SM JM V I = I , V = 0V, Note 1 1.4 V SD F S GS P 1 2 3 t 330 ns rr I = 30A, -di/dt = 100A/s, F I 25.0 A RM V = 75V, V = 0V R GS Q 4.13 C RM Note 1. Pulse test, t 300s, duty cycle, d 2%. TO-268 (IXTT) Outline e Terminals: 1 - Gate 2 - Drain 3 - Source Tab - Drain Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 .102 1 A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 b 1.65 2.13 .065 .084 1 b 2.87 3.12 .113 .123 2 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 ADVANCE TECHNICAL INFORMATION L1 4.50 .177 The product presented herein is under development. The Technical Specifications offered are derived P 3.55 3.65 .140 .144 from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a Q 5.89 6.40 0.232 0.252considered reflectio of the anticipated result. IXYS reserves the right to change limits, test R 4.32 5.49 .170 .216 conditions, and dimensions without notice. S 6.15 BSC 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537